Observation of Strong Electron Dephasing in Highly Disordered<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Cu</mml:mi><mml:mn>93</mml:mn></mml:msub><mml:msub><mml:mi>Ge</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:msub><mml:mi>Au</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Thin Films

Huang, Shih-Che; Lee, T. C.; Akimoto, Hikota; Kono, Kimitoshi; Lin, Juhn‐Jong

doi:10.1103/physrevlett.99.046601

Cited by 28 publications

(34 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…43,44 This suggests the existence of additional weakly T dependent magnetic or nonmagnetic electron dephasing processes which are noticeable in this device over our measurement temperature range. 41,45 Our extracted L ϕ values are larger than the thickness of the microflake, justifying the 2D WAL characteristics in our samples. Furthermore, our value of L ϕ (0.3 K) inferred from the perpendicular MR, Eq.…”

Section: B Weak-antilocalization Magnetoresistancementioning

confidence: 88%

“…40 For comparison, we would like to stress that in the conventional metals and alloys with strong spin-orbit scattering, such as Au-doped Cu (Ref. 41) and AuPd (Refs. 38 and 42) thin films, the MR dips in 2D WAL effect have been firmly observed, where one always finds a constant α = −1/2 in the wide T range from subkelvin temperatures up to above 20 K.…”

Section: B Weak-antilocalization Magnetoresistancementioning

confidence: 99%

See 1 more Smart Citation

Weak antilocalization in topological insulator Bi2Te3microflakes

2013

View full text Add to dashboard Cite

We have studied the carrier transport in two topological insulator (TI) Bi2Te3 microflakes between 0.3 and 10 K and under applied backgate voltages (VBG). Logarithmic temperature dependent resistance corrections due to the two-dimensional electron-electron interaction effect in the presence of weak disorder were observed. The extracted Coulomb screening parameter is negative, which is in accord with the situation of strong spin-orbit scattering as is inherited in the TI materials. In particular, positive magnetoresistances (MRs) in the two-dimensional weak-antilocalization (WAL) effect were measured in low magnetic fields, which can be satisfactorily described by a multichannelconduction model. Both at low temperatures of T < 1 K and under high positive VBG, signatures of the presence of two coherent conduction channels were observed, as indicated by an increase by a factor of ≈ 2 in the prefactor which characterizes the WAL MR magnitude. Our results are discussed in terms of the (likely) existence of the Dirac fermion surface states, in addition to the bulk states, in the three-dimensional TI Bi2Te3 material.

show abstract

Section: B Weak-antilocalization Magnetoresistancementioning

confidence: 88%

Section: B Weak-antilocalization Magnetoresistancementioning

confidence: 99%

Weak antilocalization in topological insulator Bi2Te3microflakes

2013

View full text Add to dashboard Cite

show abstract

“…In 3D weakly disordered metals, e-ph scattering is often the dominant dephasing mechanism [100,135,145], while in reduced dimensions (2D and 1D), the e-e scattering is the major dephasing process [135,144,146,147]. As T → 0 K, a constant or very weakly temperature dependent dephasing process may exist in a given sample, the physical origin for which is yet to be fully identified [135,[148][149][150][151][152]. In ITO, as already mentioned, the e-ph relaxation rate is very weak.…”

Section: Weak-localization Effect and Electron Dephasing Timementioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

show abstract

“…However, τ ϕ saturates at real experimental measurements [2], which raises an issue that whether the saturation of coherence time is intrinsic or not. There have been substantial amounts of studies of τ ϕ in different systems [2][3][4][5][6][7][8][9][10][11][12][13] including quasi-one-dimensional wires, thin films, two-dimensional electron gas (2DEG) and three-dimensional polycrystalline. Although extrinsic mechanisms may explain the coherence time saturation at ultra-low temperatures [13][14][15], intrinsic mechanisms cannot be excluded [11,16].…”

Section: Introductionmentioning

confidence: 99%

“…Although extrinsic mechanisms may explain the coherence time saturation at ultra-low temperatures [13][14][15], intrinsic mechanisms cannot be excluded [11,16]. The phase coherence time in 2DEG can be determined from the low field magneto-transport measurements [2,3,7,8,10,11].…”

Section: Introductionmentioning

confidence: 99%