Weak antilocalization in topological insulator Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>Te<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>microflakes

Chiu, Shao Pin; Lin, Juhn‐Jong

doi:10.1103/physrevb.87.035122

Cited by 132 publications

(120 citation statements)

References 38 publications

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“…H ⊥ quenches quantum backscattering because of the Aharonov-Bohm phase acquired by the partial waves. A similar dependence of R in zero field also results from e-e interaction in 2D 22,23 . The distinction between the two can be made by measuring the MR, which in the latter case is positive and mostly isotropic.…”

supporting

confidence: 73%

Kondo scattering inδ-dopedLaTiO3/SrTiO3interfaces: Renormalization by spin-orbit interactions

et al. 2014

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supporting

confidence: 73%

Kondo scattering inδ-dopedLaTiO3/SrTiO3interfaces: Renormalization by spin-orbit interactions

et al. 2014

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“…We have renormalized these corrections by δσ 0 = e 2 πh ln τ φ τe , where τ e depends on the model and is a function ofλ. We have set the ratio τ φ τ0 where τ 0 is the value of τ e in the absence of spin-orbit scattering τ 0 =h πρ(EF)γ0 to be equal to 10 in agreement with what is measured experimentally [22][23][24]. We observe that the Dirac fermions remain in the same symmetry class (symplectic, with WAL), whereas the HLN formula shows a crossover from the orthogonal symmetry class (WL) to either no correction for strictly 2DEG, or WAL for quasi-2DEG.…”

mentioning

confidence: 77%

“…For metals, where the ratio τ φ /τ e is very large (of the order of 1000 [27]) this crossover occurs for a value ofλ small enough that a perturbative treatment is possible. However, for the parameters experimentally relevant for 3DTIs, with a smaller ratio τ φ /τ e around 10 [22][23][24], this crossover occurs for values ofλ of the order of the unity, which is beyond the range of validity of the HLN derivation. We have plotted in Fig.…”

Section: Expression For the Cooperon Modes And Their Contribution To Walmentioning

confidence: 98%

Conductivity corrections for topological insulators with spin-orbit impurities: Hikami-Larkin-Nagaoka formula revisited

et al. 2015

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The Hikami-Larkin-Nagaoka (HLN) formula [Prog. Theor. Phys. 63, 707 (1980)] describes the quantum corrections to the magnetoconductivity of a quasi-2D electron gas (quasi-2DEG) with parabolic dispersion. It predicts a crossover from weak localization to antilocalization as a function of the strength of scattering off spin-orbit impurities. Here, we derive the conductivity correction for massless Dirac fermions in 3D topological insulators (3DTIs) in the presence of spin-orbit impurities. We show that this correction is always positive and therefore we predict weak antilocalization for every value of the spin-orbit disorder. Furthermore, the correction to the diffusion constant is surprisingly linear in the strength of the impurity spin-orbit. Our results call for a reinterpretation of experimental fits for the magnetoconductivity of 3D TIs which have so far used the standard HLN formula.PACS numbers: 73.20.Fz, 73.43.Qt, 73.25.+i Introduction. The problem of the diffusion of the surface states of 3DTIs is a complex one due to a variety of competing phenomena. The most striking is the fact that these surface states are described by a Dirac Hamiltonian [1,2], which gives rise to weak antilocalization (WAL) in the presence of scalar disorder [3][4][5]. The WAL correction can be affected by the interaction of the surface states with the residual bulk states [6], the thickness of the film [7], or electron-electron interactions [8,9] changing its sign and turning it into weak localization (WL). At the same time, since 3DTIs have strong spin-orbit coupling, one expects spin-orbit coupled impurities to have a strong effect on transport, different however than in graphene where two valleys are present [10,11]. Surprisingly this problem has received virtually no attention [12] and so far the Dirac nature of the states, that manifest itself in the angular dependence of the Green functions, has not been taken into account in studies of spin-orbit impurities [7]. The problem is even more complicated in a transverse magnetic field.The formula commonly used to fit the magnetoconductance experiments on 3DTIs [13][14][15][16][17][18][19][20] was derived by Hikami, Larkin and Nagaoka (HLN) [21]. The HLN formula, however, lacks important features relevant to 3DTIs: it is derived for quasi-2DEGs with a parabolic electron dispersion (impurities are treated as threedimensional objects), so it accounts neither for the Dirac nature of the surface states nor for their strictly twodimensional character. Fig. 1 is the main result of this paper, and shows the different effects of spin-orbit scatter- * The two first authors contributed equally.† Author to whom correspondence should be addressed : hankiewicz@physik.uni-wuerzburg.de ing for the HLN formula, namely WL to WAL crossover with the strength of spin-orbit impurity scattering, and for Dirac fermions, where WAL appears regardless of the strength of spin-orbit impurities. We only observe a convergence of the two formulas for large values of the strength of the impurity spin-orbit sc...

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“…The UCFs have previously been experimentally observed in lithographic metal and semiconductor mesoscopic structures at low temperatures [164,166,167], where the electron dephasing length L ϕ is comparable to the sample size. Recently, UCFs have been observed in new artificial materials, including epitaxial InAs nanowires [168], lithographic ferromagnets [169], carbon nanotubes [170], graphene [171], and topological insulators [172,173]. These new observations in artificially synthesized materials have enriched and deepened quantum electron transport physics.…”

Section: Universal Conductance Fluctuationsmentioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

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Weak antilocalization in topological insulator Bi2Te3microflakes

Cited by 132 publications

References 38 publications

Kondo scattering inδ-dopedLaTiO3/SrTiO3interfaces: Renormalization by spin-orbit interactions

Kondo scattering inδ-dopedLaTiO3/SrTiO3interfaces: Renormalization by spin-orbit interactions

Conductivity corrections for topological insulators with spin-orbit impurities: Hikami-Larkin-Nagaoka formula revisited

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

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