Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration

Abstract

We report the first observation of stimulated emission from a GaN film grown by ion-assisted molecular beam epitaxy. The observed near-UV optical emission power was a nonlinear function of the pump power density. The characteristics of the observed stimulated emission are similar to those observed recently from films grown with low-pressure metalorganic chemical vapor deposition techniques.

Gain analysis for surface emission by optical pumping of wurtzite GaN

“…Among the recent reports on stimulated emission by optical pumping, [2][3][4][5][6][7][8][9][10][11] it is noticeable that many concern the surface emissions. Among the recent reports on stimulated emission by optical pumping, [2][3][4][5][6][7][8][9][10][11] it is noticeable that many concern the surface emissions.…”

Theoretical prediction of GaN lasing and temperature sensitivity

“…2 The use of a thin buffer layer has allowed the growth of high quality GaN films and generated many reports of efficient light emission using optical pumping techniques. [3][4][5] The temperature dependence of the optical emission in nitrides exhibits a characteristic temperature T 0 of about 230 K, and lasing action via optical pumping has been observed at high temperatures. 6 Until recently, the progress of nitride LEDs and LDs was hindered due to the lack of conduction in p-type layers.…”

Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method

“…where k3=wic is the vacuum wave number, n(F,w0) = n'(i.w0) + in(F,w0)and ng(r.wo) = n'(r.w0) 1n(i,w(,) are the complex refractive phase and group indices evaluated at the nominal angular frequency wi), and the dimensionless frequency parameter i', defined as EQ) = f(z; r)ct(r) , (4) where for simplicity of notation we have dropped the argument o. The vertical part of the solutionf(z; r) is assumed to be normalized according to I -j-+ k0 n (r, z) if(z; r) = Veff(r)k0 n(r, Z)flg (r, z)f(z; r) , Under steady-state conditions, the imaginary part of i should satisfy the threshold condition Im(v) = 0, which provides information about the modal gain necessary for each mode to reach threshold.…”