Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method

Abstract

The effective frequency method is applied to analyze complex optical structures of nitride-based intracavity-contacted VCSELs. Numerical results indicate that higher-order lateral modes would be favored in nitride-based intracavity-contacted VCSELs due to strong current-crowding effect. A semi-transparent contact design is proposed to provide more uniform gain distribution within the active region and maintain lasing in the fundamental lateral mode.

Vertical-Cavity Surface-Emitting Laser Devices

“…Additionally, contributions from the band-tails [110] have been included. The calculated radial gain profile exhibits a distinctly nonuniform distribution with a sharp maximum close to the active- [188] region edge and a deep minimum in its center. Not surprisingly, such a gain profile has a strong impact on the mode profiles plotted in Fig.…”

“…Not surprisingly, such a gain profile has a strong impact on the mode profiles plotted in Fig. Radical improvement may be, however, achieved in new nitride-based VCSEL structures with semi-transparent contacts [188]. Poor overlap between the gain profile and the fundamental LP 01 mode results in its strong suppresion, and results in the LP 21 mode becoming the most favoured mode.…”

Numerical design of novel DBR

“…To the VCSEL, the numerical simulation is used for performance analysis and optimal design for a long time. Osinski and their research group had begun this kind of study before decades at least 4,5,6 . A series of research results have been obtained and some of these results have been used for optimal design and the performance improvement of devices.…”

The effect of oxide aperture diameter on the electrical characteristics of the GaN-based vertical cavity surface emitting laser

“…Consequently in GaN-based VCSELs, to find a way for injection of current laterally and formation of a high-quality DBRs are very important. Nowadays, in a GaN-based VCSEL, in order to localize current injection under a mirror, an intra-cavity contact is used to spread the current laterally and then it is injected to the active region [10]. A tunnel junction (TJ) structure in GaN-based devices is presented in order to improve the lateral conductivity [11].…”