Vertical-Cavity Surface-Emitting Laser Devices

Li, H. E.; 伊賀, 健一

doi:10.1007/978-3-662-05263-1

Cited by 99 publications

(5 citation statements)

References 33 publications

(39 reference statements)

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“…The emitting window area is associated with the oxidation aperture of each emitter, while the outer emitting area is associated with the overall area covered by the beam array. A low filling factor results in a high current density, which can lead to increased possibilities of breakdown and affect reliability [10]. Higher current density also causes gain saturation to occur earlier, impacting PCE and SE.…”

Section: Array Configurations and Architecturesmentioning

confidence: 99%

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Advances in high-power vertical-cavity surface-emitting lasers

Liu,

Zhao,

Tang

et al. 2024

J. Phys. D: Appl. Phys.

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Vertical-cavity surface emitting lasers (VCSELs) have emerged as a highly promising light source with extensive applications in various fields, including consumer electronics, optical communication, metrology, sensing and ranging. Their low-cost, high conversion efficiency, and compact footprint make them particularly attractive for widespread adoption. While considerable success has been made in enhancing the performance and speed of VCSELs for optical communications, achieving high-power VCSELs with properties such as high output power, single transverse mode operation, and temperature stability for remote sensing applications remains a challenging endeavor. This review aims to provide a comprehensive overview of the recent advancements in the development of high-power VCSELs. By examining the advancements in active materials, device designs, array configurations, this review seeks to shed light on the current state-of-the-art and potential avenues for further improvement in high-power VCSEL technology.

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Section: Array Configurations and Architecturesmentioning

confidence: 99%

“…VCSELs require high-reflectivity mirrors to offset the short axial length of the gain region. Current confinement is provided either by ion implantation or by the selective oxidation of a high Al-content of the top DBR [10]. Three types of VCSEL structures are shown in figure 2.…”

Section: Introductionmentioning

confidence: 99%

Advances in high-power vertical-cavity surface-emitting lasers

Liu,

Zhao,

Tang

et al. 2024

J. Phys. D: Appl. Phys.

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“…Apart from enhanced beam qualities and fast modulation bandwidths, VCSELs hold leading positions due to the lower cost of processing, scalability into arrays, thermal stability (i.e., wide operating temperature range) [21][22][23], wavelength stability [22,24], etc.…”

Section: Prosmentioning

confidence: 99%

“…The design and selection of materials for the active regions heavily influence the static and dynamic performances of VCSELs, and high-speed VCSELs favor high differential gains and low lasing thresholds [24]. The active region of VCSELs is typically formed by MQWs sandwiched by SCHs, and the cavity gain of VCSELs is usually limited by a short resonator round-trip time in the optical cavity.…”

Section: Active Region Designmentioning

confidence: 99%

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

et al. 2022

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Vertical-cavity surface-emitting lasers (VCSELs) have made remarkable progress, are being used across a wide range of consumer electronic applications, and have particularly received much attention from the telecom and datacom industries. However, several constraints are thus currently being tackled to improve the device characteristics and modulation formats to meet the various demanding requirements of the future 800 GbE and 1.6 TbE Ethernet standards. This manuscript discusses the device characteristics and the key considerations in the device designs and optimizations. Finally, we elucidate the latest developments and vital features of modern 850 nm VCSELs for high-speed interconnects.

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“…The spectral characteristics of a conventional semiconductor laser are typically fixated to static composition structures [1][2][3][4]. As a result, the lasing energy is generally single-valued, with a sub-1-meV linewidth.…”

mentioning

confidence: 99%

Transient dual-energy lasing in a semiconductor microcavity

Hsu

Xie

Lee

et al. 2015

Sci Rep

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We demonstrate sequential lasing at two well-separated energies in a highly photoexcited planar microcavity at room temperature. Two spatially overlapped lasing states with distinct polarization properties appear at energies more than 5 meV apart. Under a circularly polarized nonresonant 2 ps pulse excitation, a sub-10-ps transient circularly polarized high-energy (HE) state emerges within 10 ps after the pulse excitation. This HE state is followed by a pulsed state that lasts for 20–50 ps at a low energy (LE) state. The HE state is highly circularly polarized as a result of a spin-preserving stimulated process, while the LE state shows a significantly reduced circular polarization because of a diminishing spin imbalance.

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Vertical-Cavity Surface-Emitting Laser Devices

Cited by 99 publications

References 33 publications

Advances in high-power vertical-cavity surface-emitting lasers

Advances in high-power vertical-cavity surface-emitting lasers

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

Transient dual-energy lasing in a semiconductor microcavity

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