Observation of Spin Injection at a Ferromagnet-Semiconductor Interface

Hammar, P. R.; Bennett, B. R.; Yang, M. J.; Johnson, Mark

doi:10.1103/physrevlett.83.203

Cited by 461 publications

(265 citation statements)

References 15 publications

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“…So far, various schemes have been demonstrated to generate and detect spin current in nonmagnetic semiconductors, which include electrical and optical means [2][3][4][5][6][7][8][9][10] . Spin pumping is known as a method to generate a pure spin current without a net flow of charge current in nonmagnetic materials adjacent to a ferromagnetic layer under ferromagnetic resonance (FMR).…”

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confidence: 99%

Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

2013

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Spin pumping is the phenomenon that magnetization precession in a ferromagnetic layer under ferromagnetic resonance produces a pure spin current in an adjacent non-magnetic layer. The pure spin current is converted to a charge current by the spin-orbit interaction, and produces a d.c. voltage in the non-magnetic layer, which is called the inverse spin Hall effect. The combination of spin pumping and inverse spin Hall effect has been utilized to determine the spin Hall angle of the non-magnetic layer in various ferromagnetic/non-magnetic systems. Magnetization dynamics of ferromagnetic resonance also produces d.c. voltage in the ferromagnetic layer through galvanomagnetic effects. Here we show a method to separate voltages of different origins using (Ga,Mn)As/p-GaAs as a model system, where sizable galvanomagnetic effects are present. Neglecting the galvanomagnetic effects can lead to an overestimate of the spin Hall angle by factor of 8, indicating that separating the d.c. voltages of different origins is critical.

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confidence: 99%

Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

2013

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“…Silicon has long been predicted a superior spintronic material for effective maintenance of spin polarisation having exceptionally long spin coherence lifetime (~10 -5 -10 -4 s) and spin-decoherence transport length (~1 μm) due to very weak spinorbit interaction and lattice inversion symmetry [12,13]. In contrast, much work on metallic FM spin injectors proved them to be ineffective in both ohmic regime and tunneling injection [3,4,14]. Perhaps the best choice for the FM injector in such devices is magnetic semiconductors (MS) because of their compatibility with nonmagnetic semiconductors (formation of a heterojunction): the use of MS as a spin-polarized carrier injector avoids the so-called "conductivity mismatch" [15] which presents a fundamental difficulty for effective spin injection into a semiconductor from the FM metals.…”

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confidence: 99%

Direct Epitaxial Integration of the Ferromagnetic Semiconductor EuO with Silicon for Spintronic Applications

Averyanov

Sadofyev

Tokmachev

et al. 2015

ACS Appl. Mater. Interfaces

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Materials in which charge and spin degrees of freedom interact strongly offer applications known as spintronics. Following a remarkable success of metallic spintronics based on the giant-magnetoresistive effect, tremendous efforts have been invested into the less developed semiconductor spintronics, in particular, with the aim to produce three-terminal spintronic devices, e.g. spin transistors. One of the most important prerequisites for such a technology is an effective injection of spin-polarized carriers from a ferromagnetic semiconductor into a nonmagnetic semiconductor, preferably one of those currently used for industrial applications such as Si -a workhorse of modern electronics. Ferromagnetic semiconductor EuO is long believed to be the best candidate for integration of magnetic semiconductor with Si. Although EuO proved to offer optimal conditions for effective spin injection into silicon and in spite of considerable efforts, the direct epitaxial stabilization of stoichiometric EuO thin films on Si without any buffer layer has not been demonstrated to date. Here we report a new technique for control of EuO/Si interface on submonolayer level which may have general implications for the growth of functional oxides on Si. Using this technique we solve a long-standing problem of direct epitaxial growth on silicon of thin EuO films which exhibit structural and magnetic properties of EuO bulk material. This result opens up new possibilities in developing all-semiconductor spintronic devices.Modern information technology is based on the fundamental dichotomy: it utilizes charge of electrons to process information in semiconductors and their spin to store information in magnetic materials. Strong correlation of spin and charge degrees of freedom in the same material makes it possible to manipulate magnetically stored information with electric fields and/or modify fast logic gates by changing the magnetisation of their components. In metal multilayers, such effects are manifest in giant magnetoresistance, where the orientations of the macroscopic magnetisation in adjacent layers determine the electrical resistance of the structure [1,2]. Metallic spintronic devices, such as hard disk read heads and magnetic random access memory are among the most successful technologies of the past decades. However, metals cannot enhance signals -the prerequisite for transistor technology readily offered by semiconductors.The development of semiconductor spintronics requires the ability to inject, modulate and detect spin-polarized carriers in a single device, preferably made of technologically important materials currently used in integrated circuits such as Si or GaAs [3,4]. Thus far, the spin of the carriers has played a minor role in semiconductor devices mainly because Si and GaAs are nonmagnetic. On the other hand, the enhanced spin-related phenomena realized in diluted magnetic semiconductors (DMS) (especially 2 GaMnAs films [5]) open the way for applications in spintronics [6]. The interplay between electrical and magneti...

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“…Most of the current research towards realizing spin dependent semiconductor devices is focused in two areas: injecting spin polarized electrons from ferromagnets [4][5][6][7] or diluted magnetic semiconductors [8][9][10] into a semiconductor, or doping a semiconductor with a magnetic impurity [11][12][13]. Both efforts involve dealing with the physics of the bulk semiconductor.…”

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confidence: 99%

Manganese nanoclusters and nanowires on GaAs surfaces

Mochena

Lin‐Chung

2003

Phys. Rev. B

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We have computed the local magnetic moments of manganese and neighboring arsenic for various cluster configurations on the (001) surface of GaAs bulk crystal using a cluster of 512 atoms. We obtained for manganese a substantial local magnetic moment of 3 66 01 . . ± µ B for all cases considered. The induced magnetic moment of arsenic is less than that of manganese by two orders of magnitude and falls off drastically beyond nearest neighbor distance. A small amount of charge is transferred from the manganese to arsenic atom. The possibility of a spin polarized wire channel on the arsenic layer below the surface is suggested.2

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Observation of Spin Injection at a Ferromagnet-Semiconductor Interface

Cited by 461 publications

References 15 publications

Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

Direct Epitaxial Integration of the Ferromagnetic Semiconductor EuO with Silicon for Spintronic Applications

Manganese nanoclusters and nanowires on GaAs surfaces

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