Observation of Slow Oxide Traps at MOSFETs Having Metal/High-k Gate Dielectric Stack in Accumulation Mode

Random‐telegraph‐signal noise in AlGaN/GaN MIS‐HEMT on silicon

“…2a, the capturing time constant τ c starts to dominate over the emitting time constant τ e . This agrees with the behaviour detected in the CMOS gate oxide traps [3,5]. As the biasing voltage continues to increase, AlGaN/GaN RTS noise tends to be more prominent, whereas the oxide RTS noise starts to be masked out by the background noise.…”

“…2a the gate biasing voltage is -8 V and the time scale is of milliseconds range. The drain current I D now falls within two distinct levels due to the random capturing and emitting processes of the gate dielectric traps, and the phenomenon is similar to that observed in silicon MOSFETs [3,5]. When the gate bias is increased to -7.7 V, RTS noise with wider pulses and a longer period are noted, as is seen in Fig.…”

“…As the source of carrier tunnelling assisting agents, the bulk and interface traps have been reported to be one of the major challenges limiting the gate leakage current. One effective approach to analyse the traps is through the random-telegraph-signal (RTS) noise analysis, which is attributed to the random capturing and emitting processes of the carriers with the nearby traps [3][4][5][6]. Many researchers have observed the RTS noise in CMOS and AlGaN/GaN devices [5,6].…”

Accurate extraction of ΔI/I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode

“…1-4 Especially, random telegraph noise ͑RTN͒ due to the trapping and detrapping of a carrier in gate dielectric trap is dominant in the lowfrequency noise of small metal-oxide-semiconductor field effect transistor ͑MOSFET͒ devices. [5][6][7][8][9][10][11][12][13] The gate current ͑I G ͒ RTN in high-k MOSFETs was reported. 10,11 However, these studies have been conducted only in the inversion mode.…”

“…The I G -RTN under accumulation mode was studied. 12 But the gate edge current between the gate and the drain ͑or source͒ was not separated from the I G which includes the gate edge current and the tunneling current between the gate and the body. The RTN in the gate edge current was reported.…”