Bayesian network [1] has received in the probabilistic system, such as Encryption system, considerable attention in a great variety of research Automata system and Bayesian network. In a probabilistic areas such as for artificial intelligence, bioinformatics, system, the PCMOS technology can be used to implement medicine, engineering, image processing, and various the random number generator that serves to create a highly kinds of decision support systems. But up till now, most randomized bit sequence at a very low cost. The core of a of the investigation on Bayesian network has been on PCMOS-based random number generator (also named as its theory, algorithms and software implementations. probabilistic generating cell in our proposed Bayesian This paper presents the Bayesian network from a network design) is the PCMOS switch or p-switch for totally new perspective--hardware circuit simplicity. It is simply a CMOS switch with a noise source implementation. By using the new-born technology of coupled at its input node. Figure 1 shows the realization of Probabilistic CMOS (PCMOS) [2]-[5] and taking a p-switch [3]. The resistor shown in the figure is taken as a advantage of the statistical properties of simple logic source of thermal noise, which is known to follow the gates, the Bayesian network can be constructed using Gaussian distribution. An amplifier is added to amplify the hardware circuits. Such hardware implementation noise signal to make it comparable with the supply voltage revealed the advantages in aspects of power in today's technology. The sub-threshold amplifier is used consumption, delay time and quality of randomness.because of its ability to save power.
The traps in an AlGaN/GaN metal-insulator-silicon-high-electronmobility-transistor on silicon are investigated by analysing the random-telegraph-signal (RTS) noise in the drain current. Two different types of RTS noise due to the traps at the gate-oxide and AlGaN have been observed in this reported work. Through the analysis of the two RTS noises, the presences of the two trap types are verified and the trap locations have also been identified.
This paper presents the principle and design of an SOI-CMOS low noise chopper amplifier for electronic data acquisition system in down-hole-drilling application that operates at the high temperature (>170 ºC) regime. The chopper amplifier is designed to have three-stages where the first stage is a folded cascade. A commercially available 1-μm SOI-CMOS technology was chosen. Simulations showed that the input-referred noise of the chopper amplifier is about 25.6 nV/sqrt(Hz) at 700 Hz with a total current consumption of 5.496 mA. Measurements proved that the chopper amplifier is able to work up to 300 ºC.
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