Observation of room temperature negative differential resistance (NDR) in organic light-emitting diode with inorganic dopant

Fang, Yean Kuen; Chiang, Yen Ting; Chen, Shih‐Fang; Lin, Chun Yu; Hou, Shui Ching; Hung, Chih Sheng; Tsai, Tzong Yow; Chang, Shiuan Ho; Chou, Tse-Heng

doi:10.1016/j.jpcs.2007.07.067

Cited by 13 publications

(2 citation statements)

References 12 publications

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“…In 2008 Fanga et al demonstrated negative-differential-resistance (NDR) with high peak-to-valley current ratios ( i.e. , larger than 5) in Al/Alq3 structures at room temperature [ 6 ]. In 2000 Gamage et al reported that based on measurements in micro machined silicon flow sensors, the operation in the NDR regime results in increased sensitivity compared to operation in the saturation regime.…”

Section: Introductionmentioning

confidence: 99%

Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Banihashemian

Hajghassem

Aliahmadi³

et al. 2010

Sensors

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Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 Å of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface, as measured with an Atomic Forced Microscope (AFM). Differential resistance curve as a function of voltage in 77 K and 100 K shows a negative differential resistance and indicates the effect of quantum tunneling. In general form, the ratio of maximum to minimum tunneling current (PVR) and the number of peaks in I–V curves reduces by increasing the temperature. However, due to accumulation of carriers behind the potential barrier and superposition of several peaks, it is observed that the PVR increases at 100 K and the maximum PVR at 100 K is 189.6.

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Section: Introductionmentioning

confidence: 99%

Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Banihashemian

Hajghassem

Aliahmadi³

et al. 2010

Sensors

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“…Figure 2 (a) shows the J-V characteristics of the devices annealed at different annealing times. The anomalous J-V characteristic is observed at low driven voltage range from 2.5 to 6V is called negative differential resistance (NDR) which is related to guest-hopping sites (GHS) and phonon scattering which occur in blend OLED system [11]. The NDR characteristic of the as-cast blend OLED observed to be shifted towards higher driven voltage.…”

Section: Resultsmentioning

confidence: 99%

Annealing Effect on Small Molecules Blend Organic Light-Emitting Diodes

Sarjidan

Basri

Majid

2013

AMR

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This research work investigates the influence of the annealing process upon the performance of photo-emissive layer of organic light-emitting diode (OLED). The photo-emissive layer consists of a ternary blend of N, N-diphenyl-N,N-bis (3-methylphenyl)-(1,1-biphenyl)-4,4-diamine (TPD), 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) and tris-8-hydroxyquinoline (Alq3), to produce TPD:PBD:Alq3 (at 1:1:1 ratio) blend thin films, in which the material solutions are deposited onto clean substrate via spin-coating method. The samples were annealed at 100°C in 10, 20 and 30 minute of time in an open-air condition. The results reveal that the annealing process at 10 minutes produces an optimum performance of the ternary OLED.

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Feel the Heat: Nonlinear Electrothermal Feedback in Organic LEDs

Fischer

Koprucki

Gärtner

et al. 2014

Adv Funct Materials

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For lighting applications, organic light-emitting diodes (OLED) need much higher brightness than for displays, leading to self-heating. Due to the temperature-activated transport in organic semiconductors, this can result in brightness inhomogeneities and catastrophic failure. Here, it is shown that due to the strong electrothermal feedback of OLEDs, the common spatial current and voltage distribution is completely changed, requiring advanced device modeling and operation concepts. This study clearly demonstrates the effect of S-shaped negative differential resistance in OLEDs induced by self-heating. As a consequence, for increasing voltage, regions with declining voltages are propagating through the device, and even more interestingly, a part of these regions show even decreasing currents, leading to strong local variation in luminance. The expected breakthrough of OLED lighting technology will require an improved price performance ratio, and the realization of modules with very high brightness but untainted appearance is considered to be an essential step into this direction. Thus, a deeper understanding of the control of electrothermal feedback will help to make OLEDs in lighting more competitive.

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Observation of room temperature negative differential resistance (NDR) in organic light-emitting diode with inorganic dopant

Cited by 13 publications

References 12 publications

Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Annealing Effect on Small Molecules Blend Organic Light-Emitting Diodes

Feel the Heat: Nonlinear Electrothermal Feedback in Organic LEDs

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