2006
DOI: 10.1016/j.tsf.2006.05.044
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Observation of oxygen gas effect on porous silicon-based sensors

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Cited by 31 publications
(18 citation statements)
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“…The developed surface of our layer is on the order of 200 m 2 /cm 3 . Since the initial doping density of the Si is of the order of 6 × 10 15 cm -2 , there is enough density of dangling bonds to passivate the free carriers (only a few percent of the density of dangling bonds are necessary) [9]. The integration of Poisson's equation leads to a simple relation between depleted region (W) and density (σ), given by:…”
Section: Electrical Properties (Current-voltage Characteristics)mentioning
confidence: 99%
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“…The developed surface of our layer is on the order of 200 m 2 /cm 3 . Since the initial doping density of the Si is of the order of 6 × 10 15 cm -2 , there is enough density of dangling bonds to passivate the free carriers (only a few percent of the density of dangling bonds are necessary) [9]. The integration of Poisson's equation leads to a simple relation between depleted region (W) and density (σ), given by:…”
Section: Electrical Properties (Current-voltage Characteristics)mentioning
confidence: 99%
“…This mechanism includes the dipole moment of the adsorbed species, promoting an enhancement of the total current through the porous layer. The latter [9] is the chemical reactions between dangling bonds and adsorbed molecules occur inside pores, due to the adsorbed species, when they are oxidized; therefore, there is an improved passivation of dangling bonds, which enhances the conductivity [29]. And in turn change the behavior of PSi gas sensors, such as the sensitivity, etc.…”
Section: Electrical Properties (Current-voltage Characteristics)mentioning
confidence: 99%
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