Electrical Characterization and Dielectric relaxation of Au/Porous Silicon Contacts

Chavarria, Mario Andrés; Fonthal, Faruk

doi:10.1002/9780470528990.ch13

Cited by 4 publications

(1 citation statement)

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“…We obtained an improvement in the impedance in the sample when the voltage increases, which tends to be more ideal due to the improvement in the phase behavior and in the dielectric response. 18,19 We found one elongated semicircles in the plot which can be explained the relaxation mechanisms. At high frequencies (i.e.…”

Section: Resultsmentioning

confidence: 58%

Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching

Chavarria

Fonthal

2016

ECS J. Solid State Sci. Technol.

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We presented the conduction mechanism investigation of porous silicon/p-Si heterojunction fabricated on low resistivity crystalline silicon by electrochemical anodization. Measurements of the current – voltage I(V) and capacitance – voltage C(V) characteristics were used for the study of the electrical properties of this heterojunction. A deeper understanding of the physical mechanisms involved in the Au/porous silicon contacts and porous silicon/p-Si interface can be obtained from the voltage dependence of the fitting parameters according to electrical model circuits in DC and AC. We found in the heterojunction important conduction mechanisms: the resonant tunnelling, SCLC and the dielectric relaxation due to the pores layers at high frequencies.

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Section: Resultsmentioning

confidence: 58%