Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2K

Jones, G. M.; Hu, Binhui; Yang, C. H.; Yang, Man; Lyanda-Geller, Yuli

doi:10.1063/1.2202100

Cited by 5 publications

(3 citation statements)

References 13 publications

(9 reference statements)

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“…If we model the QD as a disc with a radius r, the obtained capacitance of our QD suggests an effective diameter of about 20 nm, consistent with our numerical simulation considering a miniature MOS capacitor [7].…”

supporting

confidence: 68%

Enhancement-mode quantum transistors for single electron spin

Jones

Yang

et al. 2006

Physica E: Low-dimensional Systems and Nanostructures

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supporting

confidence: 68%

Enhancement-mode quantum transistors for single electron spin

Jones

Yang

et al. 2006

Physica E: Low-dimensional Systems and Nanostructures

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“…NCs are interesting because of their characteristics that can be purposefully controlled by varying their size, shape, composition, and structure. This feature makes it possible to create devices based on new physical principles and to improve the performance of existing semiconductor devices . A 2 B 6 semiconductor NCs are among the most actively studied NCs because of the potential of enhancing the performance of lasers, photodetectors, solar cells, etc. − …”

Section: Introductionmentioning

confidence: 99%

Scanning Tunneling Spectroscopy of Free-Standing CdS Nanocrystals Fabricated by the Langmuir–Blodgett Method

Svit

Журавлев

2015

J. Phys. Chem. C

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The energy spectrum and tunneling transport through ensembles of closely packed CdS nanocrystals (NCs) obtained by the Langmuir−Blodgett (LB) method have been investigated using the scanning tunneling spectroscopy (STS) technique at room temperature. NC ensembles were obtained by annealing the solid LB matrix in a vacuum or in an ammonia atmosphere. The STS data indicate the formation of point defects attributed to an excess of Cd atoms in NC capturing tunneling electrons and the effect of the ammonia atmosphere on the defect formation process. A high density of defects arising as a result of sintering NCs that lost a protective organic shell during the migration on the substrate surface is likely to cause a band gap narrowing in NCs located near the ensemble edge. The analysis of a dependence of the zeroconduction gap value on the NC size gives evidence of a strong effect of the Coulomb interaction between the carriers located in NCs and their polarization charges in the shells on the NC energy spectrum. A dielectric constant of the shell (ε out = 10−16.5) and the energy barrier height for electrons (V 0 = 0.6−0.8 eV) were determined. The shell comprises ammonia and organic molecules, the ammonia molecules making a major contribution to the shell dielectric constant and the organic molecules determining the barrier height.

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“…For this reason, the method of top-gates, which is very successfull for realizing tunable nanostructures in GaAs heterostructures, is not straight forward on InAs. It has been shown that QDs can be realized in planar InAs heterostructures [9]. High quality QDs have been realized on nanowires (NWs), either by using Schottky contacts on InP [10] and Si NWs [11], or by epitaxial growth of InP barriers along an InAs NW [12,13].…”

Section: Introductionmentioning

confidence: 99%

Tunable few-electron quantum dots in InAs nanowires

et al. 2006

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Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs.

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Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2K

Cited by 5 publications

References 13 publications

Enhancement-mode quantum transistors for single electron spin

Enhancement-mode quantum transistors for single electron spin

Scanning Tunneling Spectroscopy of Free-Standing CdS Nanocrystals Fabricated by the Langmuir–Blodgett Method

Tunable few-electron quantum dots in InAs nanowires

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