Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Bina

Franco

et al. 2014

Self Cite

We present and validate a novel physics-based model for hot-carrier degradation. The model incorporates such essential ingredients as a superposition of the multivibrational bond dissociation process and single-carrier mechanism, dispersion of the bond-breakage energy, interaction of the electric field and the dipole moment of the bond, and electron-electron scattering. The main requirement is that the model has to be able to cover HCD observed in a family of MOSFETs of identical architecture but with different gate lengths under diverse stress conditions using a unique set of parameters.

“…The activation energy dispersion is modeled using a Gaussian distribution with E a = 1.5 eV and σ E = 0.15 eV. These values are in agreement with experimental ones [17,18].…”

Section: The Modelsupporting

confidence: 81%

A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Bina

Franco

et al. 2014

Self Cite

“…As a result, in the model we assume that E a obeys a Gaussian distribution Dominant mechanisms of HCD in short-& long-channel transistors with the mean value and the standard deviation equal to 1.5 eV and 0.15 eV correspondingly. These values are in good agreement with the experimentally observed ones [5,21]. All these ingredients are consolidated in the latest model [9,10].…”

Section: Introductionsupporting

confidence: 88%

“…The argument is that in these devices the operating/stress voltages are low, and thus carriers with energies above the threshold for triggering a single-carrier bond-breakage even of ∼1.5 eV [4,5] are unlikely. Thus, in scaled devices the only probable way to dissociate the Si-H bond is by the multiple vibrational excitation (MVE) of this bond [6][7][8], i.e.…”

Section: Introductionmentioning

confidence: 99%

Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)

Bina

Franco

et al. 2014

Using our physics-based model for hot-carrier degradation (HCD) we analyze the role of such important processes as the Si-H bond-breakage induced by a solitary hot carrier, bond dissociation triggered by the miltivibrational excitation of the bond, and electron-electron scattering. To check the roles of these mechanisms we use planar CMOS devices with gate lengths varying between 65 and 300 nm as well as a high-voltage nLDMOS transistor. We show that the current HCD paradigm needs to be revised because the aforementioned processes can be crucial even under stress conditions at which they are supposed to be weak.

“…As for the activation energy fluctuations we assume that E a obeys a Gaussian distribution with the mean values and standard deviation of �E a � = 1.5 eV and σ E = 0.15 eV. These values are in good agreement with experimentally observed ones [74][75][76]. The effect of the activation energy dispersion was incorporated in the manner that the range [�E a � − 3σ E ; �E a � + 3σ E ] was discretized and for each discretization point we evaluated the interface trap density profile N it (x) according to (11) weighted with the Gaussian distribution.…”

Section: The Modelsupporting

confidence: 75%

Modeling of hot-carrier degradation based on thorough carrier transport treatment

Wimmer²

2014

FACTA U EE

Self Cite

We present and validate a physics-based model for hot-carrier degradation. The model is based on a thorough carrier transport treatment by means of an exact solution of the Boltzmann transport equation. Such important ingredients relevant for hot-carrier degradation as the competing mechanisms of bond dissociation, electron-electron scattering, the activation energy reduction due to the interaction of the dipole moment of the bond with the electric field as well as statistical fluctuations of this energy are incorporated in our approach. The model is validated in order to represent the linear drain current change in three different devices subjected to hot-carrier stress under different conditions. The main demand is that the model has to use a unique set of parameters. We analyze the importance of all the model ingredients, especially the role of electron-electron scattering. We check the idea that the channel/gate length of the device alone is not enough to judge whether electron-electron scattering is important or not and instead a combination of the device topology and stress conditions needs to be used.