Observation of negative longitudinal magnetoresistance in the type-II Dirac semimetal 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi mathvariant="normal">PtSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>

Li, Zhaoguo; Zeng, Yong; Zhang, Jicheng; Zhou, Minjie; Wu, Weidong

doi:10.1103/physrevb.98.165441

Cited by 28 publications

(19 citation statements)

References 86 publications

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“…Figure 2b,c shows the magnetoresistances (MR) and magnetoconductance of a 3 nm‐thick PtTe 2 thin film for magnetic field applied along the current ( H // ) and perpendicular ( H ⊥ ) to the film plane at 2 K. The remarkable difference in MR between H // (MR ∝ B 2 when B < 2 T) and H ⊥ is probably related to the confined vertical dimension of thin film or the chiral anomaly of Dirac fermions. [ 36 ] The MR under H ⊥ obviously deviates from the parabolic behavior at low temperature for all the PtTe 2 thin films, which is the typical signature of weak antilocalization (WAL). WAL is usually considered as an indication of strong spin–orbit coupling.…”

Section: Figurementioning

confidence: 99%

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂

et al. 2020

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Spin-orbit torque (SOT) provides an ultrafast and energy-efficient means to switch magnetization, which is of fundamental and technical importance for spintronic devices. [1][2][3][4][5] A typical SOT device consists of heavy metal/ferromagnet (HM/FM) bilayer, where the HM (e.g., Pt, W, Ta, etc.) converts charge current into spin current mainly due to the spin Hall effect (SHE) and then exerts a torque on the adjacent FM enabling magnetization manipulation. To improve the energy efficiency of SOT-driven magnetization switching, considerable efforts have been made to enhance the charge-spin conversion efficiency of HM [6][7][8][9] and reduce the shunting current in the FM. [10,11] Engineering the bilayer structure [9,12] or replacing HM by novel materials with larger charge-spin conversion efficiency and higher conductivity [10,13,14] are possible avenues to realize higher SOT efficiency. Manipulation of magnetization by electric-current-induced spin-orbit torque (SOT) is of great importance for spintronic applications because of its merits in energy-efficient and high-speed operation. An ideal material for SOT applications should possess high charge-spin conversion efficiency and high electrical conductivity. Recently, transition metal dichalcogenides (TMDs) emerge as intriguing platforms for SOT study because of their controllability in spin-orbit coupling, conductivity, and energy band topology. Although TMDs show great potentials in SOT applications, the present study is restricted to the mechanically exfoliated samples with small sizes and relatively low conductivities.Here, a manufacturable recipe is developed to fabricate large-area thin films of PtTe 2 , a type-II Dirac semimetal, to study their capability of generating SOT. Large SOT efficiency together with high conductivity results in a giant spin Hall conductivity of PtTe 2 thin films, which is the largest value among the presently reported TMDs. It is further demonstrated that the SOT from PtTe 2 layer can switch a perpendicularly magnetized CoTb layer efficiently. This work paves the way for employing PtTe 2 -like TMDs for wafer-scale spintronic device applications.

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Section: Figurementioning

confidence: 99%

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂

et al. 2020

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“…Layered PtSe2 has been revealed with strongly layer-dependent bandgap, evolving from semiconducting to semimetallic characteristics with the increase of thickness (Figure S3, Supporting Information) [25][26] . According to density functional theory (DFT) calculations previous works [27][28] . The Dirac point in valence band exhibits large Δε, which makes it extremely difficult to modulate chiral anomaly current.…”

Section: Chiral Anomaly In Dirac Semimetal Ptse2mentioning

confidence: 99%

“…The Dirac point is positioned ≈0.55 eV above the Fermi level in the conduction band of pristine bulk PtSe 2 , which is quite different from the Dirac point in the valence band (with ≈1.1 eV below the Fermi level) of PtSe 2 reported in previous works. [28,29] The Dirac point in the valence band exhibits large Δε, which makes it extremely difficult to modulate chiral anomaly current. In this work, we focus on the investigation of the Dirac point in the conduction band of PtSe 2 to achieve field-effect chirality devices.…”

Section: Chiral Anomaly In Dirac Semimetal Ptsementioning

confidence: 99%

Field‐Effect Chiral Anomaly Devices with Dirac Semimetal

Chen

Zhang

Wang

et al. 2021

Adv Funct Materials

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Charge‐based field‐effect transistors (FETs) greatly suffer from unavoidable carrier scattering and heat dissipation. Analogous to valley degree of freedom in semiconductors, chiral anomaly current in Weyl/Dirac semimetals is theoretically predicted to be nearly nondissipative over long distances, but still lacks experimental ways to efficiently control its transport. Here, field‐effect chirality devices are demonstrated with Dirac semimetal PtSe2, in which its Fermi level is close to the Dirac point in the conduction band owing to intrinsic defects. The chiral anomaly is further corroborated by the planar Hall effect and nonlocal valley transport measurement, which can also be effectively modulated by external fields, showing robust nonlocal valley transport with micrometer diffusion length. Similar to charge‐based FETs, the chiral conductivity in PtSe2 devices can be modulated by electrostatic gating with an ON/OFF ratio of more than 103. Basic logic functions in the devices are also demonstrated with electric and magnetic fields as input signals.

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“…Symmetry protected multifold band crossings in momentum space often exhibit strong topological response in the transport measurement. A four-fold Dirac node 1 splits into a pair of two-fold Weyl nodes 2 under magnetic field, which in turn shows several anomalous transport signatures; such as anomalous Hall effect (AHE), [3][4][5][6] anomalous Nernst effect (ANE), [7][8][9] non-saturating large magneto-resistance (LMR), [10][11][12] chiral anomaly, [13][14][15][16] etc. A pair of opposite monopole charges are created upon the separation of Weyl nodes under either inversion or time reversal symmetry (TRS) breaking conditions.…”

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confidence: 99%

Unique Dirac and triple point fermiology in simple transition metals and their binary alloys

et al. 2020

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In this letter, we show the existence of Dirac like excitations in the elemental noble metal Ru, Re and Os based on symmetry analysis, first principle calculations and angle resolved photoemission (ARPES) experiment. This is the first report where unique Dirac surface states driven Fermi arcs are identified in Ru by ab-initio calculations, which are further confirmed by ARPES. We attribute these Dirac excitation mediated Fermi arc topology to be the possible reasons behind several existing transport anomalies, such as large non-saturating magneto resistance, anomalous Nernst electromotive force and its giant oscillations, magnetic breakdown etc. We further show that the Dirac like excitations in these elemental metal can further be tuned to three component Fermionic excitations, using symmetry allowed alloy mechanism for the binary alloys such as RuOs, ReOs and RuRe. arXiv:1910.00196v1 [cond-mat.mtrl-sci]

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Observation of negative longitudinal magnetoresistance in the type-II Dirac semimetal PtSe2

Cited by 28 publications

References 86 publications

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂

Field‐Effect Chiral Anomaly Devices with Dirac Semimetal

Unique Dirac and triple point fermiology in simple transition metals and their binary alloys

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Observation of negative longitudinal magnetoresistance in the type-II Dirac semimetal PtSe2

Cited by 28 publications

References 86 publications

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe2

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe2

Field‐Effect Chiral Anomaly Devices with Dirac Semimetal

Unique Dirac and triple point fermiology in simple transition metals and their binary alloys

Contact Info

Product

Resources

About

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂