The electronic structure of Au-Sn intermetallic layers of different compositions grown on Au (111) to the thickness of several nanometers has been studied in this work. The layer, interface and the substrate related components in the Au 4f and Sn 4d core-level spectra obtained using x-ray photoelectron spectroscopy (XPS) vary with deposition parameters to reveal the details of the Au-Sn formation. While AuSn is grown by deposition at room temperature, Au rich compounds form as a result of heat treatment through inter diffusion of Au and Sn. Deposition at high temperature arXiv:1911.10002v2 [cond-mat.mtrl-sci]
In this letter, we show the existence of Dirac like excitations in the elemental noble metal Ru, Re and Os based on symmetry analysis, first principle calculations and angle resolved photoemission (ARPES) experiment. This is the first report where unique Dirac surface states driven Fermi arcs are identified in Ru by ab-initio calculations, which are further confirmed by ARPES. We attribute these Dirac excitation mediated Fermi arc topology to be the possible reasons behind several existing transport anomalies, such as large non-saturating magneto resistance, anomalous Nernst electromotive force and its giant oscillations, magnetic breakdown etc. We further show that the Dirac like excitations in these elemental metal can further be tuned to three component Fermionic excitations, using symmetry allowed alloy mechanism for the binary alloys such as RuOs, ReOs and RuRe. arXiv:1910.00196v1 [cond-mat.mtrl-sci]
The electrical device characteristics of Ni/β-Ga2O3 vertical Schottky barrier diodes (SBDs) were measured in situ during the irradiation of 120 MeV Ag7+ swift heavy ions (SHIs). These devices exhibit SHI irradiation-induced degradation with 120 MeV Ag7+ ions in the ion fluence ranges of 1 × 1010 to 1 × 1012 ions/cm2. The height of the Schottky barrier is found to decrease from 1.11 to 0.93 eV, and the ideality factor increases from 1.16 to 2.06. These changes indicate the degradation of the device with SHI irradiation. A significant four orders increase is observed in the leakage current density from 4.04 × 10−8 to 1.98 × 10−4 A/cm2 at −1 V, and the series resistance also increases from 3.38 × 103 to 1.15 × 104 Ω. X-ray photoelectron spectroscopy measurements show that the Ga ions are present in divalent and trivalent states with the spectral features having the binding energies centered at 20.2 eV and 19.9 eV (Ga 3d core-levels) before and after ion irradiation. The O 2s peak shifts to 23.7 eV, and there is an increase in intensity and peak broadening due to the change in the trivalent to divalent state of Ga due to the irradiation. The O(I) peak appears at 530.7 eV in the pristine sample with the Ga–O bonding with the Ga3+ state in pure Ga2O3. Moreover, there is a significant change in the intensity and the peak width of O(II) centered at 533.0 eV after ion irradiation at the fluence of 1 × 1012 ions/cm2. This indicates that there is an increase in the surface adsorbed/lattice oxygen, resulting in GaO.
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