Observation of near-band-gap luminescence from boron nitride films

Taylor, C. A.; Brown, Steven W.; Subramaniam, Vinod; Kidner, S.; Rand, S. C.; Clarke, Roy

doi:10.1063/1.112086

Cited by 62 publications

(46 citation statements)

References 18 publications

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“…Watanabe et al 59 attributed this feature to electronic transitions from deep-level impurities based on luminescence measurements on high-purity h-BN single crystals. Since Zhang et al 60 and Taylor II et al 61 both wrongfully 55 attributed it to the band gap at 4 eV, 53,62 the one-electron defect levels presented in this study have to be understood as the first step towards unravelling its origin. In the cathodoluminescence (CL) excitation spectrum of h-BN powder for instance, the 5.55 eV emission band shows three well-resolved sub-peaks at 5.35, 5.48, 5.76 eV, in addition to a fourth diffuse peak at 5.88 eV.…”

Section: Boron Vacancy Complexesmentioning

confidence: 99%

Defect states of complexes involving a vacancy on the boron site in boronitrene

2011

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First principles calculations have been performed to investigate the ground state properties of freestanding monolayer hexagonal boronitrene (h-BN). We have considered monolayers that contain native point defects and their complexes, which form when the point defects bind with the boron vacancy on the nearest neighbour position. The changes in the electronic structure are analysed to show the extent of localization of the defect-induced mid-gap states. The variations in formation energies suggest that defective h-BN monolayers that contain carbon substitutional impurities are the most stable structures irrespective of the changes in growth conditions. The high energies of formation of the boron vacancy complexes suggest that they are less stable, and their creation by ion bombardment would require high energy ions compared to point defects. Using the relative positions of the derived mid-gap levels for the double vacancy complex, it is shown that the quasi donor-acceptor pair interpretation of optical transitions is consistent with stimulated transitions between electron-hole states in boronitrene.

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Section: Boron Vacancy Complexesmentioning

confidence: 99%

Defect states of complexes involving a vacancy on the boron site in boronitrene

2011

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“…When the temperature increases, we observe a decrease of the band intensity and a modification of its shape without energy shift (Figure 2.a). The absence of energy shift is expected since changes of the band gap energy with temperature are supposed to be very small in hexagonal BN [26,27]. Moreover, a careful comparison of the PL spectra shows that the thermal quenching is more efficient for the close DAPs, which contribute to the highenergy part of the band.…”

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confidence: 99%

Photoluminescence properties of pyrolytic boron nitride

Museur

Kanaev

2009

J Mater Sci

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Abstract.We report on spectroscopic study of pyrolytic hBN (pBN) by means of time-and energyresolved photoluminescence methods. A high purity of pBN samples (though low crystallinity) allows complementary information about excited states involved into the luminescence process. We affirm our recent conclusions about the impurity-related nature of most of the fluorescence bands in microcrystalline hBN. In addition, a broad band centred at 3.7 eV previously not considered because of its superposition with an intense structured impurity emission is attributed to the radiative recombination of deep DAPs.3

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“…These attractive properties may help us realize temperature-independent light sources with high emission efficiency. At present, the band-edge luminescence properties of bulk h-BN have not been finalized yet, with both direct and indirect properties and near band-edge emission at different wavelength being reported [1][2][3][4][5][6][7][8]. To resolve this debate, bulk h-BN with high crystalline quality is strongly needed to precisely determine its intrinsic bandgap nature and fundamental luminescence properties.…”

Section: Introductionmentioning

confidence: 99%