2001
DOI: 10.1103/physrevb.63.161305
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Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot

Abstract: The effects of excess electron occupation on the optical properties of excitons ͑X͒ and biexcitons (2X) in a single self-assembled InGaAs quantum dot are investigated. The behavior of X and 2X differ strongly as the number of excess electrons is varied with the biexciton being much more weakly perturbed as a result of its filled s-shell ground state, a direct manifestation of shell-filling effects. Good correlation is found between charging thresholds observed from s-shell recombination perturbed by p-shell oc… Show more

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Cited by 162 publications
(126 citation statements)
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References 11 publications
(8 reference statements)
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“…The simplest excitonic complexes with such carriers are the excited negatively charged exciton (X − * ) and the doubly negatively charged exciton (X 2− ) in the fundamental state. The properties of electron-electron interaction can be accessed by studying different recombination channels of an X 2− complex [3][4][5][6] or the photoluminescence excitation (PLE) of negatively charged dots 7 . The values of s-p electron-electron exchange integral reported in previous studies vary from about 4 meV 4 for InAs/GaAs QDs, to nearly 80 meV 7 in the case of CdSe/ZnSe QDs.…”
Section: Introductionmentioning
confidence: 99%
“…The simplest excitonic complexes with such carriers are the excited negatively charged exciton (X − * ) and the doubly negatively charged exciton (X 2− ) in the fundamental state. The properties of electron-electron interaction can be accessed by studying different recombination channels of an X 2− complex [3][4][5][6] or the photoluminescence excitation (PLE) of negatively charged dots 7 . The values of s-p electron-electron exchange integral reported in previous studies vary from about 4 meV 4 for InAs/GaAs QDs, to nearly 80 meV 7 in the case of CdSe/ZnSe QDs.…”
Section: Introductionmentioning
confidence: 99%
“…1. The lines labeled 1X and 2X are identified as one-exciton and biexciton emission, respectively, while the lines labeled C1 and C2 are identified as charged-exciton [23] emission. For all of the correlation measurements to be presented, the "start" counter was tuned to the 2X line, and the "stop" counter was tuned to the 1X line.…”
mentioning
confidence: 99%
“…At low temperature, recombination into the singlet state has a noticeably larger line width than recombination into the triplet state, that we interpret as a spin dependence of the relaxation mechanism for the p electron in the X 2− final state. The singlet-triplet splitting is typically 4 meV [2,15,16] (sample A) and 7 meV (sample B). Recent experiments also show an additional fine structure: the triplet is not a single line, but a doublet separated by the electron-hole exchange energy of ≈ 0.2 meV in sample B and ≈ 0.1 meV in sample A [17].…”
Section: The Doubly Charged Exciton X 2−mentioning
confidence: 99%
“…If the energy separation between p x and p y is larger than the exchange energy X ee pxpy , the p x orbital is doubly occupied such that S = 0. In the case of an S = 0 X 3− , the PL consists of a single line between the singlet and triplet states of the X 2− emission [15]. In Fig.…”
Section: The Triply Charged Exciton X 3−mentioning
confidence: 99%