Observation of Interface Defects in Diamond Lateral p-n-Junction Diodes and Their Effect on Reverse Leakage Current

Iwasaki, Takayuki; Suwa, Taisuke; Yaita, Junya; Kato, Hiromitsu; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Yamasaki, Satoshi; Hatano, Mutsuko

doi:10.1109/ted.2017.2718508

Cited by 6 publications

(2 citation statements)

References 20 publications

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“…In other materials, such as SiC, defects degrading device performance remarkably, the so‐called killer defects, have been reported . Although the effects of crystal defects for the electrical properties of diamond devices, such as Schottky barrier and p–n diodes, are also discussed, killer defects in diamond p–n junction has not yet been completely clarified.…”

Section: Introductionmentioning

confidence: 99%

Determination of Current Leakage Sites in Diamond p–n Junction

Murooka

Umezawa

Makino

et al. 2019

Physica Status Solidi (a)

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Current leakage sites in diamond p-n junction are determined by measuring an electron-beam-induced current (EBIC) technique and conductive atomic force microscopy (C-AFM). Current leakage sites in p-n diodes, particularly, can be determined by means of EBIC without destruction of the device structure. From EBIC observation, bright spots with higher signal intensity than these in surrounding region are observed in p-n diodes, and these spots strongly correlate with the leakage current. It is found that these bright spots are originating from pits of comet-shaped defects observed by a scanning electron microscope. With C-AFM, the leakage current is detected at pits of comet-shaped defects. Reduction in comet-shaped defects shall be reduced using the technique of reduction in dislocation and high-quality crystal growth to suppress the leakage current.

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Section: Introductionmentioning

confidence: 99%

Determination of Current Leakage Sites in Diamond p–n Junction

Murooka

Umezawa

Makino

et al. 2019

Physica Status Solidi (a)

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“…Thus, NV fabrication does not affect the reverse current. Device #3 might possess defects in the device that cause the leakage path[48].…”

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confidence: 99%

Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor

et al. 2020

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Nitrogen-vacancy (NV) centers in diamond work as a quantum electrometer. Using an ensemble state of NV centers, we propose vector electrometry and demonstrate measurements in a diamond electronic device. A transverse electric field applied to the N-V axis under a high voltage was measured while applying a transverse magnetic field. The response of the energy level shift against the electric field was significantly enhanced compared with that against an axial magnetic field. Repeating the measurement of the transverse electric field for multiple N-V axes, we obtained the components of the electric field generated in the device.

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Fundamental material’s nature of diamond

2018

Power Electronics Device Applications of Diamond Semiconductors

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Observation of Interface Defects in Diamond Lateral p-n-Junction Diodes and Their Effect on Reverse Leakage Current

Cited by 6 publications

References 20 publications

Determination of Current Leakage Sites in Diamond p–n Junction

Determination of Current Leakage Sites in Diamond p–n Junction

Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor

Fundamental material’s nature of diamond

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