Observation of fracture and plastic deformation during indentation and scratching inside the scanning electron microscope

Rabe, R.; Breguet, J.-M.; Schwaller, P.; Stauss, Sven; Haug, Franz‐Josef; Patscheider, Jörg; Michler, Johann

doi:10.1016/j.tsf.2004.08.096

Cited by 159 publications

(101 citation statements)

References 23 publications

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“…[35] It is therefore important to develop tools permitting to visualise the various scratching mechanisms taking place, with a high spatial resolution and sufficient depth focus. The nano-scratching tool presented in the experimental section and in the literature [17,18] could be used for GaAs scratching inside an SEM. In particular, the process of particle generation could be observed even for sub-micron particles.…”

Section: Crack At the Surface And Particle Generation: In-situ Scratcmentioning

confidence: 99%

Cleavage Fracture of Brittle Semiconductors from the Nanometre to the Centimetre Scale

et al. 2005

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The objective of this paper is to present the fundamental phenomena occurring during the scribing and subsequent fracturing process usually performed when preparing surfaces of brittle semiconductors. In the first part, an overview of nano‐scratching experiments of different semiconductor surfaces (InP, Si and GaAs) is given. It is shown how phase transformation can occur in Si under a diamond tip, how single dislocations can be induced in InP wafers and how higher scratching load of GaAs wafer leads to the apparition of a crack network below the surface. A nano‐scratching device, inside a scanning electron microscope (SEM), has been used to observe how spalling (crack and detachment of chips) and/or ductile formation of chips may happen at the semiconductor surface. In the second part cleavage experiments are described. The breaking load of thin GaAs (100) wafers is directly related to the presence of initial sharp cracks induced by scratching. By performing finite element modelling (FEM) of samples under specific loading conditions, it is found that the depth of the median crack below the scratch determines quantitatively the onset of crack propagation. By carefully controlling the position and measuring the force during the cleavage, it is demonstrated that crack propagation through a wafer can be controlled. Besides, the influence of the loading configuration on crack propagation and on the cleaved surface quality is explained.

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Section: Crack At the Surface And Particle Generation: In-situ Scratcmentioning

confidence: 99%

Cleavage Fracture of Brittle Semiconductors from the Nanometre to the Centimetre Scale

et al. 2005

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“…4,5 More recently, Rabe et al integrated a microindentation device inside a SEM. 6 The in situ SEM imaging during the microindentation test provided a real-time monitor of the true contact area, pileup, and shear band formation 7 throughout the indentation cycle. Another advantage of in situ SEM indentation is the capability to observe crack initiation and timecorrelate this event to the force-displacement curve.…”

Section: Introductionmentioning

confidence: 99%

“…The design principles are somewhat similar to the instrument introduced elsewhere; however, there are some significant differences. 6 The main differences are the electrostatic force actuation, capacitance displacement sensing, load resolution, the imaging resolution, and two possible indentation control modes (open-loop load ramp or closed-loop displacement ramp) available as well as the size of the current design. A Hysitron PicoIndenter transducer 8 (Minneapolis, MN) provides high-sensitivity force-displacement data and a Hitachi S-4800 (Japan) SEM provides high-resolution imaging.…”

Section: Introductionmentioning

confidence: 99%

In situ mechanical observations during nanoindentation inside a high-resolution scanning electron microscope

et al. 2008

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In nanoindentation, the occurrence of cracks, pileup, sink-in, or film delamination adds additional complexity to the analysis of the load-displacement curves. Many techniques and analysis methods have been used to extract both qualitative and quantitative information from the indentation test both during and after the test. Much of this information is obtained indirectly or may even be overlooked by current testing methods (e.g., cracks that open only during the loading cycle of the test may go unnoticed from a typical residual indentation analysis). Here we report on the development of a miniature depth-sensing nanoindentation instrument and its integration into a high-resolution scanning electron microscope. Real-time observation of the nanoindentation test via scanning electron microscopy allows for visualization and detection of certain events such as crack initiation, pileup, or sink-in, and other material deformation phenomena. Initial results from aluminum 〈100〉 and a thin gold film (∼225 nm) are presented.

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“…In 2004, Rabe et al introduced an in situ SEM indentation instrument. 20 This instrument is capable of recording the indentation load-depth data simultaneously. Because of using stick-slip type piezoelectric actuators which have the jump-back phenomenon, the indentation process is not steady and the jump-back also has some effect on indentation tests.…”

Section: Introductionmentioning

confidence: 99%

A novel and compact nanoindentation device for in situ nanoindentation tests inside the scanning electron microscope

Huang

Zhao

et al. 2012

AIP Advances

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In situ nanomechanical tests provide a unique insight into mechanical behaviors of materials, such as fracture onset and crack propagation, shear band formation and so on. This paper presents a novel in situ nanoindentation device with dimensions of 103mm×74mm×60mm. Integrating the stepper motor, the piezoelectric actuator and the flexure hinge, the device can realize coarse adjustment of the specimen and precision loading and unloading of the indenter automatically. A novel indenter holder was designed to guarantee that the indenter penetrates into and withdraws from the specimen surface vertically. Closed-loop control of the indentation process was established to solve the problem of nonlinearity of the piezoelectric actuator and to enrich the loading modes. The in situ indentation test of Indium Phosphide (InP) inside the scanning electron microscope (SEM) was carried out and the experimental result indicates the feasibility of the developed device

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Observation of fracture and plastic deformation during indentation and scratching inside the scanning electron microscope

Cited by 159 publications

References 23 publications

Cleavage Fracture of Brittle Semiconductors from the Nanometre to the Centimetre Scale

Cleavage Fracture of Brittle Semiconductors from the Nanometre to the Centimetre Scale

In situ mechanical observations during nanoindentation inside a high-resolution scanning electron microscope

A novel and compact nanoindentation device for in situ nanoindentation tests inside the scanning electron microscope

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