Observation of electron behavior in ambipolar polymer-based light-emitting transistor by optical second harmonic generation

Ohshima, Yuki; Lim, Eunju; Manaka, Takaaki; Iwamoto, Mitsumasa; Sirringhaus, Henning

doi:10.1063/1.3606423

Cited by 15 publications

(15 citation statements)

References 21 publications

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“…In practice, this method has also been employed for the investigation of the electron behavior and carrier distribution of ambipolar OLETs. For example, it was found that EFISHG signals of polymer‐based ambipolar OLETs could be clearly observed at the point where the EL was generated . In terms of EFISHG, these investigations suggested that the highest enhancement of the electric field was on the zero‐potential position in the channel, which represented the meeting point of electrons and holes and was an origin of the EL.…”

Section: State‐of‐the‐art Strategies For High Performance Oletsmentioning

confidence: 98%

Organic Light‐Emitting Transistors: Materials, Device Configurations, and Operations

Zhang

Chen

2016

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Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.

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Section: State‐of‐the‐art Strategies For High Performance Oletsmentioning

confidence: 98%

Organic Light‐Emitting Transistors: Materials, Device Configurations, and Operations

Zhang

Chen

2016

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182

130

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“…To overcome this situation, experimental method that is capable of directly probing carrier motion is of great help. Accordingly, we have been developing an optical electric-fieldinduced second-harmonic generation (EFISHG) method that can directly probe carrier dynamics in organic devices, and have visualized carrier transport in organic field-effect transistors [3,4], and charge accumulation and decay processes at the interface in organic light-emitting diodes [5][6][7]. The EFISHG measurement was found very effective for tracing carrier behaviors in organic devices [8][9][10].…”

Section: Introductionmentioning

confidence: 98%

Analyzing Open-Voltage of Double-Layer Organic Solar Cells Using Optical Electric-Field-Induced Second-Harmonic Generation

et al. 2012

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By using electric-field-induced second-harmonic generation (EFISHG) measurement, we analyzed photovoltaic effect of two-layer solar cells (indium zinc oxide/pentacene/C 60 /Al). Results evidently showed that negative and excessive charges s Q accumulated at the two-layer interface under illumination, e.g., s Q =-1.7×10 -9 C/cm 2 at 0.05 mW/cm 2 and -3.6×10 -9 C/cm 2 at 0.5 mW/cm 2 , while a short-circuit current flowed. The open-circuit voltage changed in accordance with accumulation charge s Q , and finally saturated. Modeling that accumulated negative charge is a source of space charge field and directly effects on the electrostatic energy stored in OSCs, dependence of the open voltage on the accumulated charge s Q was explained.

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“…21 Figure 1(a) portrays the structure of OLETs used in this experiment. First, the bottom-contact gold source and drain electrodes (25 nm thick) were deposited on a glass substrate using shadow mask.…”

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confidence: 99%

“…According to the EFISHG spectrum of F8BT films, the fundamental wavelength was fixed at 840 nm in this study. 21 The light source for the SHG measurement was a Nd:YAG laser-equipped with optical parametric oscillator (OPO:Continuum Surelite OPO). Spot size was approximately 100 lm, and fundamental light almost uniformly irradiated across the channel.…”

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confidence: 99%

“…Finally, SH light was detected by a CCD camera (Andor Technology: BV420-DR). To distinguish SH light from the electroluminescence (EL) generated at the wavelength around 560 nm, 21 an appropriate optical bandpass filter to eliminate EL light has been used. Since identical CCD camera for the EL observation has been used, the spatial resolution for both SH and EL lights is the same.…”

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The Maxwell-Wagner model for charge transport in ambipolar organic field-effect transistors: The role of zero-potential position

Mashiko

Taguchi

Weis

et al. 2012

Applied Physics Letters

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Articles you may be interested inStudy on copper phthalocyanine and perylene-based ambipolar organic light-emitting field-effect transistors produced using neutral beam deposition method Direct observation of space charge field in tetracene field-effect transistor using time-resolved microscopic optical second harmonic generation J. Appl. Phys. 109, 054506 (2011); 10.1063/1.3554835Highly balanced ambipolar mobilities with intense electroluminescence in field-effect transistors based on organic single crystal oligo( p -phenylenevinylene) derivatives Appl. Phys. Lett. 95, 033308 (2009); 10.1063/1.3184588Analysis of pentacene field-effect transistor with contact resistance as an element of a Maxwell-Wagner effect system J. Appl. Phys.

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Observation of electron behavior in ambipolar polymer-based light-emitting transistor by optical second harmonic generation

Abstract: Articles you may be interested inStudy on copper phthalocyanine and perylene-based ambipolar organic light-emitting field-effect transistors produced using neutral beam deposition method

Cited by 15 publications

References 21 publications

Organic Light‐Emitting Transistors: Materials, Device Configurations, and Operations

Organic Light‐Emitting Transistors: Materials, Device Configurations, and Operations

Analyzing Open-Voltage of Double-Layer Organic Solar Cells Using Optical Electric-Field-Induced Second-Harmonic Generation

The Maxwell-Wagner model for charge transport in ambipolar organic field-effect transistors: The role of zero-potential position

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