Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching

Wen, T. C.; Lee, W.I; Sheu, Jinn-Kong; Chi, Gou–Chung

doi:10.1016/s0038-1101(01)00256-8

Cited by 22 publications

(13 citation statements)

References 13 publications

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“…2 shows the etched GaN samples grown at 1263 K. The etch pits distribution indicates two types of pits: first type is relatively small and circular in shape, while the other one is of large hexagonal nature. The origin of the large hexagonal pits is due to both pure edge and edge screw mixed dislocations and the small represent edge dislocations [12]. While increasing the etch time, the pit size increased due to coalescence of neighboring pits.…”

Section: Resultsmentioning

confidence: 98%

Etching and ellipsometry studies on CL-VPE grown GaN epilayer

Puviarasu

2017

Materials Science-Poland

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The surface morphological characteristics of wet chemical etched GaN layers grown at different temperatures on (0 0 0 1) sapphire substrates by Chloride-Vapor Phase Epitaxy (Cl-VPE) have been studied using optical microscope. Significant surface morphology changes have been observed in correlation to the growth temperature and etching time. Also optical properties of the as grown and high-energy silicon (Si) ion irradiated gallium nitride (GaN) epilayers were studied using monochromatic ellipsometry. The effect of ion fluences on the refractive index of the GaN has been investigated and it has been found to decrease with an increase of ion fluence. This decrease is attributed to irradiation-induced defects and polycrystallization which plays an important role in determining the optical properties of silicon (Si) ion irradiated GaN layers.

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Section: Resultsmentioning

confidence: 98%

Etching and ellipsometry studies on CL-VPE grown GaN epilayer

Puviarasu

2017

Materials Science-Poland

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“…The etched pit densities of the three samples are shown in Table 1: sample B had the smallest number of etched pits. The pits have been proved to originate from screw threading dislocations or mixed threading dislocations with screw components, while few pure edge dislocations cause pits [23]. Since the density of mixed dislocations is usually an order of magnitude larger than that of the screw type in GaN film, most of the pits are mixed type dislocations.…”

Section: Resultsmentioning

confidence: 99%

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films

Xing

Wang

et al. 2011

Chin. Sci. Bull.

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The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiN x interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for ( 1102 ) reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0×10 8 cm −2. GaN films were grown on sapphire substrates by metal organic chemical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiN x interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.growth models, defects, metal-organic chemical vapor deposition, GaN, SiN x

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“…The coalescence of ELO layers is an effective method of obtaining broad area ELO layers. However, it has been reported that the coalescence of ELO layers can lead to the formation of dislocations and voids [3,4]. Therefore, the detail of the coalescence process is an important consideration.…”

Section: Introductionmentioning

confidence: 99%