Dislocation-free large area InP ELO layers by liquid phase epitaxy

Kochiya, Toshio; Oyama, Yutaka; Kimura, Toshihiro; Suto, Kén; Nishizawa, Jun Ichi

doi:10.1016/j.jcrysgro.2005.04.030

Cited by 9 publications

(4 citation statements)

References 12 publications

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“…Compared with GaAs-on-Si, ELO techniques are more widely employed [ 148 , 149 , 150 ] on InP-on-Si growth, because it is very difficult to obtain low TDDs and large-scale via the direct growth of InP on Si. For the optimization of InP ELO on the (001) Si substrate, Metaferia et al [ 151 ] investigated the ELO of InP from mesh and line openings on the masked InP seed layer on the Si (001) wafer.…”

Section: Latest Approach Of Heteroepitaxy Of Si-based Iii-v Group Mat...mentioning

confidence: 99%

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Wang

et al. 2022

Nanomaterials

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Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology. To achieve high performance OEICs, the crystal quality of the group III-V epitaxial layer plays an extremely vital role. However, there are several challenges for high quality group III-V material growth on Si, such as a large lattice mismatch, highly thermal expansion coefficient difference, and huge dissimilarity between group III-V material and Si, which inevitably leads to the formation of high threading dislocation densities (TDDs) and anti-phase boundaries (APBs). In view of the above-mentioned growth problems, this review details the defects formation and defects suppression methods to grow III-V materials on Si substrate (such as GaAs and InP), so as to give readers a full understanding on the group III-V hetero-epitaxial growth on Si substrates. Based on the previous literature investigation, two main concepts (global growth and selective epitaxial growth (SEG)) were proposed. Besides, we highlight the advanced technologies, such as the miscut substrate, multi-type buffer layer, strain superlattice (SLs), and epitaxial lateral overgrowth (ELO), to decrease the TDDs and APBs. To achieve high performance OEICs, the growth strategy and development trend for group III-V material on Si platform were also emphasized

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Section: Latest Approach Of Heteroepitaxy Of Si-based Iii-v Group Mat...mentioning

confidence: 99%

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Wang

et al. 2022

Nanomaterials

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“…In case of InP-on-Si, ELO techniques have been more widely employed [190][191][192][193][194][195][196], compared with GaAs-on-Si in which direct growth of GaAs on Si is preferred. Because it is very difficult to obtain low density of TDs through the direct growth of InP on Si, the use of ELO method is beneficial for achieving high-quality InP layer on Si.…”

Section: Epitaxial Lateral Overgrowthmentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

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Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

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“…As a countermeasure to these problems, epitaxial lateral overgrowth (ELO) technique shows great promise for growing InP on Si [1]. This remarkable technique can not only reduce the dislocation density [2], but also the strain in the grown layers. For these reasons, and in view of the reduction of defects and lattice strain, it is appropriate that InP layers are directly formed on the Sisubstrate with the ELO technique.…”

Section: Introductionmentioning

confidence: 99%