Observation of diameter dependent carrier distribution in nanowire-based transistors

Schulze, Andreas; Hantschel, Thomas; Eyben, Pierre; Verhulst, Anne S.; Rooyackers, R.; Vandooren, A.; Mody, Jay; Nazir, Aftab; Leonelli, Daniele; Vandervorst, Wilfried

doi:10.1088/0957-4484/22/18/185701

Cited by 45 publications

(23 citation statements)

References 36 publications

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“…This saturation has also been reported before for Si. 5 From Figure 3(b), it becomes furthermore obvious that the saturation in the highly doped regime is different for CDT and FDT probes, an effect which has not been discussed before. In order to understand the impact of tip radius and apex resistivity on the calibration curve, a detailed investigation is required.…”

Section: A Tip Modelingmentioning

confidence: 83%

A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications

Schulze

Verhulst

Nazir

et al. 2013

Journal of Applied Physics

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Quantitative carrier profiling represents a key element in the process development of future nanoelectronic devices. During the last decade, scanning spreading resistance microscopy (SSRM) has evolved as the method of choice for two-dimensional carrier mapping due to its unique spatial resolution and high sensitivity when applied to silicon (Si)-based devices. While the electrical nanocontact between a SSRM probe and Si is well documented, the insight is insufficient to understand or make predictions about the properties of the SSRM contact in case of high-mobility germanium (Ge) samples. Therefore, we present in this paper a model describing this contact in more detail, taking into account the effects of the applied pressure as this leads to the formation of a β-Sn pocket right underneath the probe and a spatially non-homogeneous bandgap reduction in the underlying Ge. The resistance probed through the resulting Schottky contact is further influenced by the dimensions of the nanocontact and in particular by the spatial extent of the surface states which are present at the cross-sectional surface. To account for the low-bias IV-characteristics of n-Ge, the model also includes trap-assisted tunneling. Using this model, we are able to describe the role of probe properties such as probe radius and resistivity on the shape (steepness, saturation, non-linearity) of the Ge calibration curve. We demonstrate experimentally and by simulation that low-resistivity probes are indispensable for a high sensitivity when applying SSRM to highly doped samples.

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Section: A Tip Modelingmentioning

confidence: 83%

A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications

Schulze

Verhulst

Nazir

et al. 2013

Journal of Applied Physics

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“…A similar approach has been used also by Ou et al [64] for 3D carrier profiling in Si nanowires. More recently, Schulze et al [65] have applied it to characterize the resistance distribution within contact holes filled with carbon nanotubes and the carrier distribution in nanowire-transistors [66].…”

Section: Spm Tomographymentioning

confidence: 99%

Nanoscaled Electrical Characterization

Celano

2016

Metrology and Physical Mechanisms in New Generation Ionic Devices

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“…[7][8][9][10][11][12] Recently, detecting individual impurity charges in silicon-on-insulator (SOI) films by SKPM at 13K has been reported. [13] Advancement in fabrication of metal-oxidesemiconductor field effect transistors (MOSFETs) present the challenge for local characterization of the built-in potential by using SKPM because it is employing long-range Coulomb interaction and the spatial resolution may have an inherent limit.…”

Section: Introductionmentioning

confidence: 99%

Built-in Potential Mapping of Silicon Field Effect Transistor Cross Sections by Multimode Scanning Probe Microscopy

Bolotov

Tada

Arimoto

et al. 2013

Trans. Mat. Res. Soc. Japan

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Fig 1. AFM topograph of cross sectional Si(110) surface with two MOSFETs (L G 35 nm) after final processing step. Color scale is 2.5 nm. Built-in potential maps of metal-oxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 30 and 150 nm were measured on cross sectional Si(110) surfaces covered with ultra-thin oxide. The maps were obtained by measuring the contact potential difference (CPD) using multimode scanning probe microscopy (MSPM) with a vibrating probe in the constant force mode. The improved spatial resolution and the sensitivity to the electrostatic potential were achieved for an optimal probe-sample gap (~1 nm) and vibration amplitude of 0.2 nm. The capability and challenges of the measurement method are discussed by comparing measured CPD maps with device simulation results.

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Observation of diameter dependent carrier distribution in nanowire-based transistors

Cited by 45 publications

References 36 publications

A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications

A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications

Nanoscaled Electrical Characterization

Built-in Potential Mapping of Silicon Field Effect Transistor Cross Sections by Multimode Scanning Probe Microscopy

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