Observation of contact resistivity independence from Schottky barrier height on heavily doped p-type SiGe

Zhang, Jian; Hónɡ, Yú; Schaekers, Marc; Horiguchi, N.; Wang, Lin-Lin; Jiang, Yu-Long

doi:10.1109/icsict.2016.7998968

Cited by 1 publication

(1 citation statement)

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“…Thus, to increase the transistor current, several studies have aimed to induce compressive strain in the channel by increasing the Ge concentration [6,7]. SiGe is useful for strain engineering and it also effectively reduces the contact resistance in the S/D regions by reducing the Schottky barrier heights [8][9][10]. As the transistor size decreases, achieving a low contact resistivity becomes crucial.…”

Section: Introductionmentioning

confidence: 99%

Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain

Ryu

Park

et al. 2021

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Silicon german ium (SiGe) has attracted significant attention for applications in the source/drain (S/D) regions of p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs). However, in SiGe, as the Ge concentration increases, high-density defects are generated, which limit its applications. Therefore, several techniques have been developed to minimize defects; however, these techniques require relatively thick epitaxial layers and are not suitable for gate-all-around FETs. This study examined the effect of Ge concentration on the embedded SiGe source/drain region of a logic p-MOSFET. The strain was calculated through nano-beam diffraction and predictions through a simulation were compared to understand the effects of stress relaxation on the change in strain applied to the Si channel. When the device performance was evaluated, the drain saturation current was approximately 710 µA/µm at an off current of 100 nA/µm with a drain voltage of 1 V, indicating that the current was enhanced by 58% when the Ge concentration was optimized.

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