Observation of band structure on amorphous silicon surface and performance of solar cells with controlled band offsets on hetero-junctions

Influence of SnO2:F/ZnO:Al bi-layer as a front electrode on the properties of p-i-n amorphous silicon based thin film solar cells

“…Influence of SnO 2 :F/ZnO:Al bi-layer as a front electrode on the properties of p-i-n amorphous silicon based thin film solar cells Hyeongsik Park, 1 Jaehyeong Lee, 1,a) Heewon Kim, 2,b) Doyoung Kim, 3,a) Jayapal Raja, 1,a) and Junsin Yi 1,4,c) 1 The effect of aluminum doped zinc oxide film used between a fluorine doped tin oxide layer and a hydrogenated amorphous silicon carbide layer to improve the open circuit voltage (V oc ) and fill factor (FF) for high efficiency thin film solar cells. The efficiency enhancement was accomplished by the insertion of high work-function layers engineered in the interfaces to raise FF as well as V oc .…”

“…Several methods for the high efficiency of a p-i-n hydrogenated amorphous silicon (a-Si:H) solar cell have been studied. 1,2 To improve the efficiency of a-Si:H solar cells, a bi-layer is inserted between the p-type layer and transparent conducting oxide electrodes (TCOs), or between the p-type and active layers. 3 Several works have adopted high band gap materials such as amorphous carbon and amorphous WO 3 as a buffer layer.…”