Influence of SnO2:F/ZnO:Al bi-layer as a front electrode on the properties of p-i-n amorphous silicon based thin film solar cells

Park, Hyeongsik; Lee, Jaehyeong; Kim, Heewon; Kim, Doyoung; Raja, Jayapal; Yi, Junsin

doi:10.1063/1.4807127

Cited by 18 publications

(7 citation statements)

References 16 publications

(16 reference statements)

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“…The manipulation of the absolute electron energies (with respect to all other materials) is less well understood. The addition of dielectric layers and nanodots have been shown to improve performance and characteristics in several applications [17,18]; however, no consensus has emerged regarding the reasons for their success [19]. Several mechanisms have been put forward.…”

Section: Introductionmentioning

confidence: 99%

Crystal electron binding energy and surface work function control of tin dioxide

et al. 2014

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The work function of a material is commonly used as an intrinsic reference for band alignment; however, it is notoriously susceptible to extrinsic conditions. Following the classification of Bardeen we calculate values for the bulk binding energy of electrons in rutile-structured SnO 2 and the effect of the surface on the work function, thus highlighting the role of the surface in determining the energy levels of a material. Furthermore we demonstrate how, through the use of ultrathin heteroepitaxial oxide layers (SiO 2 , TiO 2 , PbO 2) at the surface, the work function can be tuned to achieve energy levels commensurate with important technological materials. This approach can be extended from transparent conducting oxides to other semiconducting materials.

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Section: Introductionmentioning

confidence: 99%

Crystal electron binding energy and surface work function control of tin dioxide

et al. 2014

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“…Therefore, it is very important to study the properties of indium–free or indium–reduced TCO thin films for the application in solar cells. Among the possible materials, tin oxide is considered as one of the most promising candidates mainly because of its inexpensive cost, chemically stable in acidic and basic solutions, stable in hydrogen plasma, and mechanically strong, which are important attribute for the fabrication and operation of solar cells 15 16 17 . The undoped SnO 2 thin films have high resistivity due to its stoichiometric nature which could not produce large number of free charge carriers.…”

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confidence: 99%

Preparation and investigation of nano-thick FTO/Ag/FTO multilayer transparent electrodes with high figure of merit

Lyu

et al. 2016

Sci Rep

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In order to improve the conductivity of the single–layered nano-thick F doped SnO2 (FTO) thin films, an Ag mid–layer is embedded between the FTO layers. In our work, the effects of mid–layer Ag and top FTO layer on the structural, electrical and optical properties of FTO/Ag/FTO multilayered composite structures deposited on quartz glass substrates by magnetron sputtering at 100 °C have been investigated. As the thickness of Ag mid–layer increases, the resistivity decreases. As the top FTO layer thickness increases, the resistivity increases. The highest value of figure of merit φTC is 7.8 × 10−2 Ω−1 for the FTO (20 nm)/Ag (7 nm)/FTO (30 nm) multilayers, while the average optical transmittance is 95.5% in the visible range of wavelengths and the resistivity is 8.8 × 10−5 Ω·cm. In addition, we also describe the influence of Ag and top FTO layer thickness on structural, electrical and optical properties of the nano-thick FTO (20 nm)/Ag/FTO multilayers and the mechanism of the changes of electrical and optical properties at different Ag and top FTO layer thicknesses.

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“…It has been reported that the high work function of the AZO layer can moderate the abrupt band bending across the AZO/ a-Si:H interface leading to a barrier height lowering and, thus, to a better collection efficiency of hole carriers. 26,27 Therefore, the introduction of the AZO layer may result in the barrier height lowering between the electrode and the p-layer and, thus, yields the better QE loss of the HPS-PV cell.…”

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confidence: 99%

Multi-functional stacked light-trapping structure for stabilizing and boosting solar-electricity efficiency of hydrogenated amorphous silicon solar cells

Huang

Shieh

Pan

et al. 2013

Applied Physics Letters

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A sandwiched light-trapping electrode structure, which consists of a capping aluminum-doped ZnO (AZO) layer, dispersed plasmonic Au-nanoparticles (Au-NPs), and a micro-structured transparent conductive substrate, is employed to stabilize and boost the conversion-efficiency of hydrogenated amorphous silicon (a-Si:H) solar cells. The conformal AZO ultrathin layer (5 nm) smoothened the Au-NP-dispersed electrode surface, thereby reducing defects across the AZO/a-Si:H interface and resulting in a high resistance to photo-degradation in the ultraviolet-blue photoresponse band. With the plasmonic light-trapping structure, the cell has a high conversion-efficiency of 10.1% and the photo-degradation is as small as 7%.

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Influence of SnO2:F/ZnO:Al bi-layer as a front electrode on the properties of p-i-n amorphous silicon based thin film solar cells

Cited by 18 publications

References 16 publications

Crystal electron binding energy and surface work function control of tin dioxide

Crystal electron binding energy and surface work function control of tin dioxide

Preparation and investigation of nano-thick FTO/Ag/FTO multilayer transparent electrodes with high figure of merit

Multi-functional stacked light-trapping structure for stabilizing and boosting solar-electricity efficiency of hydrogenated amorphous silicon solar cells

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