Objective comparison of scanning ion and scanning electron microscope images

Ishitani, Tohru; Tsuboi, Hideki

doi:10.1002/sca.4950190707

Cited by 34 publications

(23 citation statements)

References 17 publications

(19 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although the SE excitation mechanism in the He-SIM is similar to that in the SEM, there are differences between the SIM and SEM, which are closely related to resolution and image fidelity, such as the image contrast in specimen material, surface topography, applied voltage, and so on [2,3]. Therefore, an understanding of the mechanisms and modeling of the image formation and its comparison with the SEM images are a key issue for device applications [4].…”

Section: Introductionmentioning

confidence: 99%

Comparison of secondary electron emission in helium ion microscope with gallium ion and electron microscopes

Ohya

Yamanaka

Inai

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Comparison of secondary electron emission in helium ion microscope with gallium ion and electron microscopes

Ohya

Yamanaka

Inai

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

“…A peculiar contrast arises from SIM as ions are different from electrons in charge, mass, and momentum transfer and consequently both in penetration depth and surface modification (Orloff, 1993;Orloff et al ., 2003;Goldstein et al ., 2003;Giannuzzi and Stevie, 2005). An objective comparison between SEM and SIM is further discussed in the works by Ishitani and Tsuboi (1997) and Ohya and Ishitani (2003).…”

Section: Methodsmentioning

confidence: 99%

FIB/SEM Characterization of Carbon‐based Fibers

et al. 2007

View full text Add to dashboard Cite

The aim of this paper is to show how a focused ion beam combined with a scanning electron microscope (FIB/SEM machine) can be adopted to characterize composite fibers with different electrical behavior and to gain information about their production and modification. This comparative morphology investigation is carried out on polyacrylonitrile (PAN) carbon fibers and their chemical precursor (the oxidized PAN or oxypan) which has different electrical properties. Fibers are imaged by electron and ion beams and sectioned by the focused ion beam (FIB). A sample of oxypan fibers processed by a radio frequency (RF) plasma is also investigated and the role of the conductive carbon layer around their unmodified, insulating bulk is discussed. A suitable developed edge detection technique (EDT) on electron, ion images, and after the FIB sectioning, provides quantitative information about the thickness of the created layer.

show abstract

“…As-processed and aged devices were observed in the FIB/SEM using electron and ion channelling contrast, the latter being strictly dependent on the grain orientation [11]. Fig.…”

Section: Microstructural Characterizationmentioning

confidence: 98%

Mechanisms of power module source metal degradation during electro-thermal aging

Ruffilli

Berkani

Dupuy³

et al. 2017

Microelectronics Reliability

View full text Add to dashboard Cite

The long-term reliability of power devices for applications in the automotive industry is limited by the electrothermal and/or thermo-mechanical aging of the metallic parts. In the present work, we characterize the bonding wire and source metallization degradation of power MOSFETs-based devices under accelerated aging conditions, through electron and ion microscopy. The metal degradation is driven by an enhanced self-diffusion of aluminium (Al) atoms along the grain boundaries and a generalized fatigue crack propagation from the surface down to the silicon (Si) bulk. The metallization under the wire bonds is a critical location because it is initially plastically deformed during the bonding process. In addition, the wire-metal interface presents several imperfections, such as small cavities and Al oxide residues. During the electro-thermal cycles, they could be the starting point for harmful cracks that run along the interface (and eventually cause the wire lift-off or the cracking of the substrate). Whichever the propagation direction, the generation of these cracks locally increases the device resistance and temperature, and accelerates the aging process until failure.Mechanisms of power module source metal degradation during electro-thermal aging.

show abstract

Objective comparison of scanning ion and scanning electron microscope images

Cited by 34 publications

References 17 publications

Comparison of secondary electron emission in helium ion microscope with gallium ion and electron microscopes

Comparison of secondary electron emission in helium ion microscope with gallium ion and electron microscopes

FIB/SEM Characterization of Carbon‐based Fibers

Mechanisms of power module source metal degradation during electro-thermal aging

Contact Info

Product

Resources

About