Two device runs of high voltage bipolar 6H-SiC p + n diodes were fabricated. Emitter and JTE (Junction Termination Extension) periphery were both realized by aluminum ion implantation, at room temperature (RT) for JTE, and both RT and 300°C for emitters. All diodes Current-Voltage characteristics were systematically measured in forward (0 → 5V) and reverse bias (0 → -50V). Breakdown voltages were also measured on a part of diodes. The emitter quality after implantation and annealing seems to be important for the diode behavior in forward and in reverse bias also. For the 300°C implanted diodes higher current densities (200 A.cm -2 at 5V) are obtained in forward bias, with a more homogeneous distribution, showing better doping activation and layer quality. Compared to the RT implanted diodes, a less number of 300°C implanted diodes with high leakage currents is obtained. Those with the smallest emitter and the largest JTE length sustain more than 1100V. The breakdown voltage value (V BR ) is similar to the calculated value and independent on the testing ambient. This indicates a breakdown in the bulk volume, confirmed by a lower V BR for the RT implanted diodes. This lower V BR value is due to the presence of an amorphous layer after implantation and thus residual defects at the emitter-epilayer junction interface.