OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

Wang, S.R.; Raynaud, Christophe; Planson, Dominique; Lazar, Mihai; Chante, Jean-Pierre

doi:10.4028/www.scientific.net/msf.433-436.863

Cited by 4 publications

(2 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results could not be obtained without useful JTE lateral protection against breakdown. The efficiency of our JTE were also proved by cartography on diodes surface with Optical Beam Induced Current Measurements up to 1kV [6].…”

Section: Methodsmentioning

confidence: 85%

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

Lazar

Cardinali

Raynaud

et al. 2004

MSF

View full text Add to dashboard Cite

Two device runs of high voltage bipolar 6H-SiC p + n diodes were fabricated. Emitter and JTE (Junction Termination Extension) periphery were both realized by aluminum ion implantation, at room temperature (RT) for JTE, and both RT and 300°C for emitters. All diodes Current-Voltage characteristics were systematically measured in forward (0 → 5V) and reverse bias (0 → -50V). Breakdown voltages were also measured on a part of diodes. The emitter quality after implantation and annealing seems to be important for the diode behavior in forward and in reverse bias also. For the 300°C implanted diodes higher current densities (200 A.cm -2 at 5V) are obtained in forward bias, with a more homogeneous distribution, showing better doping activation and layer quality. Compared to the RT implanted diodes, a less number of 300°C implanted diodes with high leakage currents is obtained. Those with the smallest emitter and the largest JTE length sustain more than 1100V. The breakdown voltage value (V BR ) is similar to the calculated value and independent on the testing ambient. This indicates a breakdown in the bulk volume, confirmed by a lower V BR for the RT implanted diodes. This lower V BR value is due to the presence of an amorphous layer after implantation and thus residual defects at the emitter-epilayer junction interface.

show abstract

Section: Methodsmentioning

confidence: 85%

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

Lazar

Cardinali

Raynaud

et al. 2004

MSF

View full text Add to dashboard Cite

show abstract

“…The work presented in this paper deals with the realization of a high voltage bipolar diode on an n + substrate with an nepilayer purchased from SiCrystal [2]. The structure is a pin diode protected by a junction termination extension (JTE) [3]. First, the conception and the fabrication are described.…”

Section: Introductionmentioning

confidence: 99%

1.2 kV Pin Diodes with SiCrystal Epiwafer

Vang

Raynaud

Brosselard

et al. 2007

MSF

View full text Add to dashboard Cite

Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate devices fabricated on alternative source materials. Currently, CREE is the world market leader of SiC wafers. Nowadays, some new companies begin to propose alternative material. The European manufacturer SiCrystal furnishes now some epiwafers for the fabrication of 1,2kV devices. In this paper we present 4H-SiC 1.2 kV pin diodes with a JTE termination realized on a SiCrystal epiwafer. The devices exhibit a blocking voltage of 1.2 kV, a current density of 420 A.cm-2 and a specific differential series resistance of 4.4 m-⋅cm2. The yield of fabricated diodes with a breakdown voltage greater 600 V is superior to 75%.

show abstract

Optical Beam Induced Current Measurements: Principles and Applications to SiC Device Characterization

et al. 2009

View full text Add to dashboard Cite

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

Cited by 4 publications

References 5 publications

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

1.2 kV Pin Diodes with SiCrystal Epiwafer

Optical Beam Induced Current Measurements: Principles and Applications to SiC Device Characterization

Contact Info

Product

Resources

About