O-vacancies mediated room temperature ferromagnetism in Cu-implanted In2O3:Cu nanowires

Abstract

The correlation between the ferromagnetism and oxygen vacancy (VO) of Cu-implanted In2O3 nanowires was investigated. When annealed in vacuum, the saturation magnetization first increased to 0.71 Cu/μB for In2O3:Cu nanowires annealed at 800 °C, after which it rapidly decreased to 0.55 Cu/μB when annealed at 900 °C. However, the saturation magnetization showed a monotonously decreased trend when annealed in O2. The In2O3:Cu nanowires showed a direct relationship between the oxygen vacancy concentration and the degree of magnetization. The oxygen vacancies orbitals mediated indirect double-exchange model has been used to explain the ferromagnetism properties in Cu-doped In2O3 and a sufficient amount of both oxygen vacancies and Cu impurities is essential to the observed ferromagnetism.

Stabilizing electric switching of ferromagnetism in In2O3:Cu thin films

“…The Cu was chosen for doping of In 2 O 3 films in this work for two reasons. First, Cu doping can increase the concentration of oxygen vacancies in In 2 O 3 which is benefit to the switching of ferromagnetism [23]. Second, neither metallic Cu nor its oxides (CuO and Cu 2 O) are ferromagnetic and hence could exclude the possibility that the ferromagnetism originates from the magnetic impurities [24].…”

Activation and Enhancement of Room-Temperature Ferromagnetic Exchange in (Cu,N)-codoped In2O3 Dilute Magnetic Nanowires

“…The research driven by Zou et al has offered evidence of ferromagnetic exchange mediated by oxygen vacancies in Cuimplanted In 2 O 3 nanowires. 20 Meanwhile, Krishna et al reported that the observed ferromagnetism in the Cu-doped In 2 O 3 films is directly associated with the magnetic interaction between Cu 2+ ions via single free electron-trapped oxygen vacancy. 21 Additionally, N is also an outstanding dopant in In 2 O 3 due its suitable high solubility limit, low electronegativity, and lower reactivity than oxygen.…”

“…In order to avoid the extrinsic ferromagnetism, the doping of nonmagnetic Cu is a good choice to avoid the formation of magnetic secondary phases. The research driven by Zou et al has offered evidence of ferromagnetic exchange mediated by oxygen vacancies in Cu-implanted In 2 O 3 nanowires . Meanwhile, Krishna et al reported that the observed ferromagnetism in the Cu-doped In 2 O 3 films is directly associated with the magnetic interaction between Cu 2+ ions via single free electron-trapped oxygen vacancy .…”