O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Li, Keshuang; Liu, Zizhuo; Tang, Mingchu; Liao, Mengya; Kim, Dong‐Young; Deng, Huiwen; Sanchez, Ana M.; Beanland, Richard; Martin, M.; Baron, T.; Chen, Siming; Wu, Jiang; Seeds, A.J.; Liu, Huiyun

doi:10.1016/j.jcrysgro.2019.01.016

Cited by 36 publications

(30 citation statements)

References 36 publications

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“…Room temperature threshold current density (J th ) is as low as 83.3 A cm −2 , which is better than the previously reported J th for 1.3 µm InAs QD laser on an exact Si (001) substrate all grown by MBE. [14,32,49] Since robust temperature stability is necessary to support the Si based laser working in a high-temperature environment, the Si-based laser was tested at a range of operating temperatures. Lasing was observed under a pulsed mode with operating temperatures up to 120 °C.…”

Section: Performance Characterization Of Qd Laser On Simentioning

confidence: 99%

Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)

Yang

et al. 2020

Advanced Optical Materials

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offers a low-cost solution for high-speed interconnects for data transmission. The integration of high-quality direct-bandgap III-V lasers on Si platform is a core technology for achieving high-performance Si-based III-V optoelectronic devices, [1-3] due to the inefficient light-emitting properties of Group-IV materials. [4,5] Currently, the realization of III-V lasers on Si mainly relies on either wafer bonding or monolithic growth techniques, with the latter method being more favorable for low cost, high yield and large-scale production. [6,7] Nevertheless, the large lattice mismatch, different polarities and incompatible thermal expansion coefficients between III-V materials and Si induce various crystal defects during the epitaxial growth such as threading dislocations (TDs), inversion boundaries (IBs, often called anti-phase boundaries, APBs), and microcracks. [8-13] These defects act as non-radiative recombination centers and significantly hinder the performance of optoelectronic devices in terms of lifetime, threshold operating power and temperature performance. [2,7,14] Approaches including strained-layer superlattice (SLS) acting as a defect filter layer (DFL) and a longer cool-down period after growth were implemented to sufficiently suppress TDs and micro-cracks, respectively. [12,13,15] By contrast, IBs are electrically charged planar Monolithic integration of III-V materials and devices on CMOS compatible on-axis Si (001) substrates enables a route of low-cost and high-density Si-based photonic integrated circuits. Inversion boundaries (IBs) are defects that arise from the interface between III-V materials and Si, which makes it almost impossible to produce high-quality III-V devices on Si. In this paper, a novel technique to achieve IB-free GaAs monolithically grown on on-axis Si (001) substrates by realizing the alternating straight and meandering single atomic steps on Si surface has been demonstrated without the use of double Si atomic steps, which was previously believed to be the key for IB-free III-V growth on Si. The periodic straight and meandering single atomic steps on Si surface are results of high-temperature annealing of Si buffer layer. Furthermore, an electronically pumped quantum-dot laser has been demonstrated on this IB-free GaAs/Si platform with a maximum operating temperature of 120 °C. These results can be a major step towards monolithic integration of III-V materials and devices with the mature CMOS technology.

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Section: Performance Characterization Of Qd Laser On Simentioning

confidence: 99%

Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)

Yang

et al. 2020

Advanced Optical Materials

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“…4(b) is 128 K in 20-40 s C and 37 K in 40-70°C, which are comparable to monolithic QD microring lasers on silicon [51] and 5 mm-long QD Fabry-Perot lasers on native III-V substrate [76]. Infinite or even negative T 0 in QD lasers have been reported [77], [78], as well as relatively low T 0 numbers in 20-60 K [79], [80], indicating that multiple factors like p-type doping, inhomogeneous boarding and dislocation density all contribute to temperature performance. More thermal management discussion will be provided in Section IV-C below.…”

Section: A Light-current-voltage (Liv) Characteristicmentioning

confidence: 64%

Fully-Integrated Heterogeneous DML Transmitters for High-Performance Computing

Liang

Roshan-Zamir

Fan

et al. 2020

J. Lightwave Technol.

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Optical connectivity, which has been widely deployed in today's datacenters and high-performance computing (HPC) systems, is a disruptive technological revolution to the IT industry in the new Millennium. In our journey to debut an Exascale supercomputer, a completely new computing concept, called memorydriven computing, was innovated recently. This new computing architecture brings challenges and opportunities for novel optical interconnect solutions. Here, we first discuss our strategy to develop appropriate optical link solutions for different data traffic scenarios in memory-driven HPCs. Then, we present detailed review on recent work to demonstrate fully photonics-electronicsintegrated single-and multi-wavelength directly modulated laser (DML) transmitters on silicon for the first time. Compact heterogeneous microring lasers and laser arrays were fabricated as photonic engines to work with a customized complementary metal-oxide semiconductor (CMOS) driver circuit. Microring lasers based on conventional quantum well and new quantum dot lasing medium were compared in the experiment. Thermal shunt and MOS capacitor structures were integrated into the lasers for effective thermal management and ultra low-energy tuning. It enables a

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“…By optimising the growth conditions, Li et al achieved a high-quality electrically pumped onaxis Si-based QD laser with low threshold current density (160 A/cm 2 @ RT CW). Moreover, the lasing was observed at up to 52 o C under CW [69].…”

Section: Fp Lasers On On-axis Si Substratementioning

confidence: 93%

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

et al. 2019

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In the past few decades, numerous high-performance silicon (Si) photonic devices have been demonstrated. Si, as a photonic platform, has received renewed interest in recent years. Efficient Si-based III-V quantum-dot (QDs) lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of III-V compounds. Although the material dissimilarity between III-V material and Si hindered the development of monolithic integrations for over 30 years, considerable breakthroughs happened in the 2000s. In this paper, we review recent progress in the epitaxial growth of various III-V QD lasers on both offcut Si substrate and on-axis Si (001) substrate. In addition, the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.

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O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Cited by 36 publications

References 36 publications

Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)

Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)

Fully-Integrated Heterogeneous DML Transmitters for High-Performance Computing

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

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O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Cited by 36 publications

References 36 publications

Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)

Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)

Fully-Integrated Heterogeneous DML Transmitters for High-Performance Computing

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

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Product

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O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate