Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers

Kuo, Yen−Kuang; Yen, Shwu-Huey; Yao, Ming; Tsai, Min‐Chien; Chen, M. L.; Liou, Bo Ting

doi:10.1007/s00340-008-3184-2

Cited by 2 publications

(1 citation statement)

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“…The requirement of the design, about 300 meV or more is desirable to avoid thermal quenching even at high temperature as for the energy difference between the first electron-quantum level and GaP X-state (ΔE), for the conduction band offset is more than 400 meV in recent papers of InGaAsN QW laser [22,23]. lattice-mismatch is about 7-8% by Stranski-Krastanov growth mode, and it is hard to increase the N composition beyond to 3% without decrease in luminescence intensity for the growth of dilute nitrides.…”

Section: Analysis Methodsmentioning

confidence: 99%

Analysis of quantum levels for self‐assembled InGaAsN/GaP quantum dots

Fukami

Umeno

Furukawa

et al. 2010

Phys. Status Solidi (c)

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We develop the design method of luminescence device with the strained quantum dots (QDs) on Si using a theoretical analysis on realistic structure. We have calculated numerically the first electron and heavy‐hole quantum levels of self‐assembled InGaAsN/GaP QDs using the finite element method, the model‐solid theory and the band‐anticrossing model. The calculation results indicate that N incorporation into InGaAs QDs drastically reduces the conduction band minimum (∼120 meV/N at%), and that it is shown enough energy difference between the first electron‐quantum level and GaP X‐state when N composition is 1∼2%. For self‐assembled In0.5Ga0.5As0.99N0.01/GaP QDs, the calculated transition energy at room temperature (RT) nearly matches with the measured photoluminescence (PL) peak energy. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Analysis Methodsmentioning

confidence: 99%