2007
DOI: 10.1007/s11814-007-5025-0
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Numerical simulation on silane plasma chemistry in pulsed plasma process to prepare a-Si :H thin films

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Cited by 8 publications
(6 citation statements)
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“…Kim [27] studied the vanadia content and its effect on the formation of N 2 O over V 2 O 5 -WO 3 /TiO 2 catalysts with 1-8% vanadia. They observed increasing selectivity for the formation of N 2 O with an increased content of vanadia reaching 7.5% at 670 K for the 8% catalyst.…”
Section: Discussionmentioning
confidence: 99%
“…Kim [27] studied the vanadia content and its effect on the formation of N 2 O over V 2 O 5 -WO 3 /TiO 2 catalysts with 1-8% vanadia. They observed increasing selectivity for the formation of N 2 O with an increased content of vanadia reaching 7.5% at 670 K for the 8% catalyst.…”
Section: Discussionmentioning
confidence: 99%
“…Self-consistent fluid models have been used to simulate silane plasma [12][13][14][15], and the model presented in this article is a self-consistent fluid model. Due to the discharge processes, silane is consumed and hydrogen is dissociated, the composition of the background gas is different form the feedstock gas and is chiefly made of neutrals, ions, and electrons.…”
Section: One-dimensional Fluid Modelmentioning
confidence: 99%
“…4 Plasma CVD has the major advantage that coatings of uniform thickness and composition can be produced even on substrates with a complex shape at lower temperature. [3][4][5][6][7][8] Further study has indicated that the properties of titanium carbide are related to its chemical composition and texture and are a result of low adhesion or residual stresses in the thin film. [3][4][5][6][7][8][9][10] The residual stress in thin film deposited by PACVD may be either compressive or tensile, depending on the deposition conditions.…”
Section: Introductionmentioning
confidence: 99%