Numerical simulation of vaporization effect of long pulsed laser interaction with silicon

Liang, 张梁 Zhang; Xiaowu, 倪晓武 Ni; Lü, Jian; Jian, 刘剑 Liu; Gang, 戴罡 Dai

doi:10.3788/ope.20111902.0437

Cited by 3 publications

(1 citation statement)

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“…Assuming that the

p_{υ} false(T_{s} false)

temperature is the equilibrium vapor pressure, the expression is expressed as [8,9]:

p_{υ} (T_{s}) = P_{\infty} \exp [\frac{L_{υ}}{k_{B} T_{s}} (\frac{T_{s}}{T_{b}} - 1)],

where

T_{s}

—target surface temperature,

T_{b}

—boiling point temperature,

p_{\infty}

—equilibrium vapor pressure at

T_{b}

—temperature,

L_{υ}

—latent heat of vaporization, and

k_{B}

—Boltzmann constant. It is obvious that target surface vapor pressure is related to temperature, and it is a function of temperature.…”

Section: Theoretical Analysis Of Thermodynamic Effects Of Polycrysmentioning

confidence: 99%

A Study of Polycrystalline Silicon Damage Features Based on Nanosecond Pulse Laser Irradiation with Different Wavelength Effects

Chen

Zhang

et al. 2017

Materials

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Based on PVDF (piezoelectric sensing techniques), this paper attempts to study the propagation law of shock waves in brittle materials during the process of three-wavelength laser irradiation of polysilicon, and discusses the formation mechanism of thermal shock failure. The experimental results show that the vapor pressure effect and the plasma pressure effect in the process of pulsed laser irradiation lead to the splashing of high temperature and high density melt. With the decrease of the laser wavelength, the laser breakdown threshold decreases and the shock wave is weakened. Because of the pressure effect of the laser shock, the brittle fracture zone is at the edge of the irradiated area. The surface tension gradient and surface shear wave caused by the surface wave are the result of coherent coupling between optical and thermodynamics. The average propagation velocity of laser shock wave in polysilicon is 8.47 × 103 m/s, and the experiment has reached the conclusion that the laser shock wave pressure peak exponentially distributes attenuation in the polysilicon.

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“…Assuming that the

p_{υ} false(T_{s} false)

temperature is the equilibrium vapor pressure, the expression is expressed as [8,9]:

p_{υ} (T_{s}) = P_{\infty} \exp [\frac{L_{υ}}{k_{B} T_{s}} (\frac{T_{s}}{T_{b}} - 1)],

where

T_{s}

—target surface temperature,

T_{b}

—boiling point temperature,

p_{\infty}

—equilibrium vapor pressure at

T_{b}

—temperature,

L_{υ}

—latent heat of vaporization, and

k_{B}

—Boltzmann constant. It is obvious that target surface vapor pressure is related to temperature, and it is a function of temperature.…”

Section: Theoretical Analysis Of Thermodynamic Effects Of Polycrysmentioning

confidence: 99%

A Study of Polycrystalline Silicon Damage Features Based on Nanosecond Pulse Laser Irradiation with Different Wavelength Effects

Chen

Zhang

et al. 2017

Materials

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show abstract

Investigation of wavelength effects on polycrystalline silicon damages using nanosecond pulse laser irradiation

Chen

Liu

et al. 2019

Journal of Materials Processing Technology

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Investigation of thermodynamic progress of silicon ablated by nanosecond uv repetitive pulse laser

Bao¹,

Han²,

Duan³

et al. 2012

Acta Phys. Sin.

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The blind holes processing experiment is conducted on the silicon under the radiation of a 355 nm nanosecond UV repetitive pulse laser. With the increase of the laser pulse number, the variations of the silicon morphology,the depth and aperture of the blind holes are observed, and the thermodynamic process of UV laser irradiating silicon is analyzed. The results show that the formation of the blind silicon hole in the laser ablation process is due to the interaction between thermal effect and force effect. Thermal effect results in fusion, vaporization and even producing laser plasma by ionization in silicon, which is essential to the removal of the material. The molten material is compressed by the plasma shock wave and the expansion of the high-temperature gaseous material,and then ejection outward, which will benefit the further ablation; the force propagates along the laser transmission direction,perpendicular to the silicon surface, so the removal parts are distributed mainly along the depth direction of the hole, reaching a high aperture ratio, which is up to 8:1 in our experiments. In addition, the laser-induced plasma also prevents the effect of laser on the target surface, and with the increase of hole depth, laser defocusing occurs. The two aspects finally restrict the ablation depth. The results shows that in the process of laser irradiation on the material, the ablation efficiency is much higher when the former 100 pulses arrived than the sequent laser pulses.

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Numerical simulation of vaporization effect of long pulsed laser interaction with silicon

Cited by 3 publications

References 0 publications

A Study of Polycrystalline Silicon Damage Features Based on Nanosecond Pulse Laser Irradiation with Different Wavelength Effects

A Study of Polycrystalline Silicon Damage Features Based on Nanosecond Pulse Laser Irradiation with Different Wavelength Effects

Investigation of wavelength effects on polycrystalline silicon damages using nanosecond pulse laser irradiation

Investigation of thermodynamic progress of silicon ablated by nanosecond uv repetitive pulse laser

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