Numerical Simulation of the Type Inversion in n+-p-p+ Si Solar Cells, Used for Space Applications, under 1 MeV Electron Irradiation

Hamache, A.; Sengouga, Nouredine; Meftah, Afak

doi:10.1016/j.egypro.2014.06.017

Cited by 6 publications

(2 citation statements)

References 27 publications

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“…One at the value of fluences for about 10 15 e/cm 2 and other, more significant at about 8.8.10 16 e/cm 2 . These peaks represents an anomalous behavior of the short-circuit current as observed by some authors in theirs works [12,13,14,5]. From this observation, we can conclude that change in the wide of the SCR is responsible of that anomalous behavior of the short-circuit current [9] and that, this anomalous behavior can be occur for different values of the fluences include in the range of the fluences in our study.…”

Section: Figure 4: Open Circuit Voltage Versus Fluencessupporting

confidence: 80%

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Behavior of Solar Cells Under 1 MeV Electrons Irradiation: Impact of Diffusion Length Reduction, Majority Carrier Removal and SCR Widening

Tchouadep,

Soro,

Tchedre

et al. 2024

Preprint

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When solar cells are used for space applications, there are exposed to different types of energetic particles such as protons and electrons. Those energetic particles create defects in the base of the solar cell and lead to the degradation of the performances of the solar cell. Three mainly phenomenon observed in silicon solar cells exposed to 1 MeV electron irradiation are decrease in diffusion length, removal of majority charge careers and enlargement of Space Charge Region (SCR). These three phenomenon lead to the type conversion of the base of solar cell and an anomalous behavior of the short-circuit current for a certain value of the fluences. In the present study, theoretical approach is used to investigate the impact of decrease in diffusion length, removal of majority charge careers and enlargement of SCR on the anomalous behavior of the short-circuit current and type conversion of the base. The electric parameters are studied under AM 1.5 for different fluences of 1 MeV electrons. It was found that, defects responsible for the anomalous behavior of the short-circuit current could appear for different values of the fluences and that, the type conversion of the base is caused by the removal of the majority charged carriers and decrease in diffusion length while the anomaly observed in the evolution of the short-circuit current is caused by the widening of the SCR.

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Section: Figure 4: Open Circuit Voltage Versus Fluencessupporting

confidence: 80%

“…The solar cell performance suffers a sever deterioration as a result. [5,6]. Further improvements in conversion efficiency and radiation resistance of space cells are necessary for widespread applications of space missions.…”

Section: Introductionmentioning

confidence: 99%