Abstract:The computer program AMPS-1D (analysis of microelectronic and photonic structures) has been employed to simulate the performance of the a-Si:H/a-SiGe:H/a-SiGe:H triple-junction solar cell at the radiation of AM1.5G (100 mW/cm 2 / and room temperature. Firstly, three sub-cells with band gaps of 1.8, 1.6 and 1.4 eV are simulated, respectively. The simulation results indicate that the density of defect states is an important factor, which affects the open circuit voltage and the filling factor of the solar cell. … Show more
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