Design of Highly Efficient CZTS/CZTSe Tandem Solar Cells

Amiri, Samaneh; Dehghani, Sajjad

doi:10.1007/s11664-019-07898-w

Cited by 31 publications

(14 citation statements)

References 31 publications

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“…The abundance in the earth of the CZTS components is between 2.2 and 260 ppm while the amount of the indium is only 0.05 ppm [3]. Owing to the direct band gap energy in the range 1.4-1.56 eV that matches well with the solar spectrum [4], the large absorption coefficient ( . 10 4 cm −1 ), the intrinsic p-type electrical conductivity and low thermal conductivity [5], CZTS is considered as one of the potential absorber materials for the next-generation solar cells.…”

Section: Introductionmentioning

confidence: 95%

“…The abundance in the earth of the CZTS components is between 2.2 and 260 ppm while the amount of the indium is only 0.05 ppm [3]. Owing to the direct band gap energy in the range 1.4–1.56 eV that matches well with the solar spectrum [4], the large absorption coefficient , the intrinsic p -type electrical conductivity and low thermal conductivity [5], CZTS is considered as one of the potential absorber materials for the next-generation solar cells. Thin films solar cells based on chalcogenide material Cu(In,Ga)Se 2 achieved a high efficiency beyond 22% [6] while for CZTS solar cells the maximum reported efficiency was 12.6% by non-vacuum deposition method [7] and 11.6% by vacuum method [8].…”

Section: Introductionmentioning

confidence: 99%

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Optimization of sulphurization temperature for the production of single-phase CZTS kesterite layers synthesized by electrodeposition

Boudaira

Meglali

Bouraiou

et al. 2020

Surface Engineering

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Cu 2 ZnSnS 4 films were grown onto FTO/glass substrate by electrodeposition. The influence of sulphurization temperature on CZTS properties was examined using XRD, Raman spectroscopy, SEM, optical transmittance and electrical resistivity measurements. The film sulphurized at 400°C exhibited CuS as the major phase mixed with CZTS and SnS 2 phases. However, the films sulphurized at 450 and 500°C are mainly composed of the CZTS kesterite phase with SnS 2 and CuS as secondary phases. Further sulphurization temperature increase up to 550°C led to the complete disappearance of CuS and SnS 2 phases and the obtained film is a pure CZTS kesterite mono-phase. The Raman spectra exhibit a line centred at 334 cm −1 ; it is the most intense recorded in the spectra of the films sulphurized at 500 and 550°C. The film sulphurized at 550 °C, had an ideal band gap of 1.40 eV and electrical resistivity of (41.4 ± 5.5) Ω cm.

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Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Optimization of sulphurization temperature for the production of single-phase CZTS kesterite layers synthesized by electrodeposition

Boudaira

Meglali

Bouraiou

et al. 2020

Surface Engineering

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“…In order to study the tandem structure design, both top and bottom cells have been studied numerically many times and then the principles of series circuit have been used for both cell parameters. The achieved efficiency of their design was 19.87 % [28]. Furthermore, a research study of other CZTS/CZTSe tandem structure has been done and an efficiency of 21.7 % has been achieved for matched current at 211.33 nm thick CZTS top cell in conjunction with 2000 nm bottom cell [8].…”

Section: Introductionmentioning

confidence: 99%

“…In both cases, photons do not contribute to the useful output of the device [27]. Multijunction and tandem solar cells are effective solutions to this problem [28]. The CZTSSe bandgap can be changed from 1.0 eV (pure CZTSe) to 1.5 eV (pure CZTS) by altering the ratio of selenium and sulfur S/(S + Se) [17,18,29].…”

Section: Introductionmentioning

confidence: 99%

Simulation Study of CZTS/CZTSe Tandem Solar Cell by Using SCAPS-1D Software

Ghalmi¹,

Bensmaine²,

Elbar³

et al. 2022

J. Nano- Electron. Phys.

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The solar spectrum can be divided by tandem solar cells into several subcells that have different bandgaps which convert, more effectively, the light into electricity than the single cells. In this study, the simulation of the photovoltaic (PV) characteristics of a CZTS/CZTSe tandem solar cell, based on structures of copper zinc tin sulfide (CZTS) as a top cell and copper zinc tin selenide (CZTSe) as a bottom cell, was accomplished by using SCAPS-1D simulator under AM1.5 illumination. Initially, the simulation of single CZTS and CZTSe solar cells was performed to give efficiency of 14.37 % and 17.87 %, respectively, which are in good agreement with the literature results. Before feeding with filtered spectrum, the simulated PV parameters of the CZTS/CZTSe tandem solar cell are the conversion efficiency () of 20.68 % and the shortcircuit current density (Jsc) of 20.205 mA/cm 2 of the top and bottom cells with arbitrary normal thicknesses. Furthermore, and in order to reach the matching current, both top and bottom cells have been investigated at different thicknesses for tandem configuration after validation, where the performance of the top and bottom cells is at thicknesses ranged from 0.05-0.5 m and 0.1-1 m, respectively. The performance of the tandem solar cell is determined after filtered spectrum feeding and current matching. The Jsc of CZTS/CZTSe tandem solar cell is 20.33 mA/cm 2 for 0.255 m thick of the top, CZTS, cell and 0.8 m of the bottom, CZTSe, cell. The maximum  of 22.98 % is reached for tandem structure design with open circuit voltage (Voc) enhancing of 1.48 V.

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“…Their manufacturing process is simple, and they are often manufactured by a simple spin coating method, which is expected to achieve large-scale industrial production. 22,23 In the absorber layer materials of the layered solar cell, quaternary direct band gap semiconductors such as copper zinc tin sulfide (CZTS)(Cu 2 ZnSnS 4 ), selenide (CZTSe)(Cu 2 ZnSnSe 4 ), and mixed sulfur compounds (Cu 2 ZnSn(S x Se 1-x ) 4 ) (CZTSSe) are considered to be promising materials to produce solar cells with low-price and excellent performance. [24][25][26] These materials are promising Earthabundant alternatives to existing thin film photovoltaic technologies, which have brilliant inherent characteristics such as high absorber coefficient, adjustable band gap, the high-resistance for irradiation, and non-toxicity.…”

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confidence: 99%

Numerical Simulations on CZTSSe-Based Solar Cells with GaSe as an Alternative Buffer Layer Using SCAPS-1D

Wu¹,

Hao²,

Wei³

et al. 2022

ECS J. Solid State Sci. Technol.

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In recent years, because of non-toxic characteristic, relatively high efficiency, and adjustable band gap, the research on thin film solar cells using Cu2ZnSn (SxSe1-x)4 (CZTSSe) as the absorber layer material has been in full swing. But its large band gap width makes it easy to form an excessive potential barrier with other materials, leading to the raise of the recombination probability of carriers. Therefore, it is necessary to select a suitable buffer layer to optimize such solar cells. Compared with the common buffer material CdS, GaSe crystal has a high damage threshold, strong anisotropy, and nonlinear optical properties. In this paper, GaSe was selected as the buffer layer of the solar cell with CZTSSe as the absorber layer. At the same time, traditional holes transport layer was removed to save its complex manufacturing process. The addition of GaSe also adjusted the energy band arrangement of the battery, which alleviated the strong potential barrier between the absorber layer and the window layer to improve the carrier transport effectively. The effects of the impurity ratio, thickness, temperature, and defect density on the device performance were also discussed in detail, which provides a reference for experimental preparation and industrial application.

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Design of Highly Efficient CZTS/CZTSe Tandem Solar Cells

Cited by 31 publications

References 31 publications

Optimization of sulphurization temperature for the production of single-phase CZTS kesterite layers synthesized by electrodeposition

Optimization of sulphurization temperature for the production of single-phase CZTS kesterite layers synthesized by electrodeposition

Simulation Study of CZTS/CZTSe Tandem Solar Cell by Using SCAPS-1D Software

Numerical Simulations on CZTSSe-Based Solar Cells with GaSe as an Alternative Buffer Layer Using SCAPS-1D

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