Numerical simulation of electron confinement in contiguous quantum wires

Kerkhoven, Thomas; Raschke, M.; Galick, A. T.

doi:10.1016/0749-6036(92)90395-l

Cited by 13 publications

(6 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In the last two decades, several computer-simulation programs have been written with the aim of finding the potential and mobile charge density distribution in conventional devices [2][3][4][5][6], Ravailoli et al [7] and Kerkhoven et al [8,9] have reported self-consistent computations of the electronic states of a quantum wire while Kumar et al [10][11][12] have presented self-consistent numerical solutions of the Poisson and Schrödinger equations for a GaAs-Al x Ga 1−x As quantum dot. Kerkhoven et al [8,9] work is for two-dimensional (2D) devices.…”

Section: Introductionmentioning

confidence: 99%

Numerical modeling of silicon quantum dots

Udipi

Vasileska

Ferry

1996

Superlattices and Microstructures

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Numerical modeling of silicon quantum dots

Udipi

Vasileska

Ferry

1996

Superlattices and Microstructures

View full text Add to dashboard Cite

“…(1)) numerically by using the forth order RungeKutta (RK4) method [36] to determine the eigen-energies (E (1) n (x)) are used in calculation of the electron and hole distributions (n (1) (x) , p (1) (x)) in conduction and valance bands respectively from Eqs. (6)(7)(8). After obtaining the electron and hole densities (n (1) (x), p (1) (x)) at the Fig.…”

Section: Self-consistent Solution Of Coupled Schrödinger-poisson Equamentioning

confidence: 99%

“…But at present, the rapid advancements in epitaxial film growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapor deposition (UHV/CVD), etc. [2][3][4] have enabled ultra-thin structures to be grown with very sharp bandgap offsets which leads to important quantum mechanical effects on the device characteristics such as quantum confinement, quantum tunneling of charge carriers [5][6][7]. The above mentioned quantum mechanical effects are strong motivations for studying the quantum mechanical behavior of some important heterostructures such as quantum well, quantum wire, quantum dot, etc.…”

Section: Introductionmentioning

confidence: 98%

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

Acharyya¹,

Chatterjee²,

Das³

et al. 2014

J Comput Electron

View full text Add to dashboard Cite

In this paper, the quantum mechanical behavior of a reverse biased nano-scale p-n junction based on Si/Si 0.4 Ge 0.6 /Si quantum well has been studied by obtaining the self-consistent solution of coupled Schrödinger and Poisson equations. The carrier confinement within the said quantum well structure has been investigated by analyzing the special variations of electron and hole densities throughout the device structure obtained from the self-consistent solution of coupled Schrödinger and Poisson equations for different widths of the quantum well. The tunnel current across the junction has also been calculated for the heterostructure for different applied reverse bias voltages. Results show that, due to the greater depth of the quantum well in conduction band as compared to that in valance band of Si/Si 0.4 Ge 0.6 /Si heterostructure, the quantum confinement effect is more pronounced for electrons in conduction band as compared to that for holes in valance band. Finally the current-voltage characteristics of the heterostructure under consideration have been investigated for different widths of the quantum well. It is observed that the modulation of tunnel current may be achieved by varying the width of the quantum well. The present study is the groundwork for investigating the optoelectronic properties of nano-scale photodetectors based on Si/Si 1−x Ge x /Si material system capable of detecting longer wavelengths around 1.30 and 1.55 μm.

show abstract

“…There have been many theoretical studies of the electronic structure of single quantum wires [3,4,?,6-9]. For multiple parallel wires, theoretical studies of transport in models of non-interacting electrons [10,11] and interacting electrons [12] have been published, and electronic structure calculations of coupled quantum wires have also begun to appear [13,14]. Recently, it has been demonstrated [14], using the density functional theory of Hohenberg Kohn and Sham, that the transverse levels of parallel quantum wires can lock together under certain conditions.…”

Section: Introductionmentioning

confidence: 99%

Theory of interacting parallel quantum wires

Sun¹,

Kirczenow²

1995

Can. J. Phys.

View full text Add to dashboard Cite

We present self-consistent numerical calculations of the electronic structure of parallel Coulomb-confined quantum wires, based on the Hohenberg–Kohn–Sham density functional theory of inhomogeneous electron systems. We find that the corresponding transverse energy levels of two parallel wires lock together when the wires' widths are similar and their separation is not too small. This energy-level locking is an effect of Coulomb interactions and of the density of states singularities that are characteristic of quasi-one-dimensional fermionic systems. In dissimilar parallel wires, level lockings are much less likely to occur. Energy-level locking in similar wires persists to quite large wire separations, but is gradually suppressed by inter-wire tunneling when the separation becomes small. The experimental implications of these theoretical results are discussed.

show abstract

Numerical simulation of electron confinement in contiguous quantum wires

Cited by 13 publications

References 6 publications

Numerical modeling of silicon quantum dots

Numerical modeling of silicon quantum dots

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

Theory of interacting parallel quantum wires

Contact Info

Product

Resources

About