Numerical simulation of Cs2AgBiBr6-based perovskite solar cell with ZnO nanorod and P3HT as the charge transport layers

Alam, Intekhab; Mollick, Rahat; Ashraf, Ali

doi:10.1016/j.physb.2021.413187

Cited by 75 publications

(56 citation statements)

References 87 publications

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“…9-a a decrease in J sc,ZnO as a function of the thickness and a stability of V oc,ZnO at the value 0.8436 V. As for Fig. 9-b which notices an increase in e ciency up to a maximum value h ZnO = 30,47 % by comparing with results illustrated in [16].…”

Section: Cisselayer Optimizationsupporting

confidence: 59%

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Lachhab

Bliya

Ibrahmi

et al. 2021

Preprint

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This manuscript presents an optimization of the performances of the CISSe/CdS/ZnO structure. 12 tests were performed for each layer on thickness, gap energy and temperature using SCAPC-1D. Numerical data were compiled with the open circuit voltage, the short circuit density, the fill factor and the efficiency. The results obtained are confirmed with the measurements illustrated in the literature. The analyses indicate a progressive improvement in the performance of the structure for each test; an efficiency of 28.8 % was recorded for the CISSe layer while 30.07 % as an efficiency for CdS and 31.47 % for the absorbent layer. On the other hand, an open circuit voltage does not exceed 1.37V for the whole structure.Thus, these results are satisfied and encouraged.

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Section: Cisselayer Optimizationsupporting

confidence: 59%

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Lachhab

Bliya

Ibrahmi

et al. 2021

Preprint

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“…wxAMPS has been developed at the UIUC, Illinois, United States. 2 Actually, it is an updated version of AMPS developed at the PSU, Pennsylvania, United States. 25 It can generate EQE curves, J-V curves, electrical field distribution, as well as carrier concentration and recombination profiles utilizing some fundamental semiconductor Equations.…”

Section: Scaps and Wxamps Simulation Methodologymentioning

confidence: 99%

“…This declination can be ascribed to the nonradiative Shockley-Read-Hall (SRH) recombination, which is a principal cause for lifetime reduction, carrier recombination, and a significant reduction in the device performance. 2 The corresponding equations of SRH recombination have been described in the supporting information (Data S1). 4 To minimize the defect densities, a perovskite with high crystallinity can be an option.…”

Section: Effect Of the Change In Absorber Layer Defect Densitymentioning

confidence: 99%

“…1 These are a group of semiconductor materials with atypical optoelectronic properties, like high absorption coefficient, longer carrier diffusion length, weakly bound exciton, and a wide range of bandgap tunability. 2,3 However, although these light-harvesting layers surpassed the power conversion efficiency (PCE) in perovskite solar cells (PSCs), there are two leading problems: the toxicity of lead and the PSCs that give high PCE consist of organic cations, like methylammonium and formamidinium ions. 4 These ions are extremely volatile and hygroscopic, thus making the device unstable and more intolerant of heat and moisture.…”

Section: Introductionmentioning

confidence: 99%

“…10 The researchers mostly use the organic spiro-OMeTAD as the HTL in the PSCs because of its good tunability and processability. 2 However, its poor conductivity, very low hole mobility, high fabrication cost, and environmental instability obstruct its application. 11 Therefore, the inorganic p-type semiconductors are better replacements as the HTL because they possess outstanding chemical stability along with excellent hole mobility.…”

Section: Introductionmentioning

confidence: 99%

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Investigating the theoretical performance ofCs₂TiBr₆‐based perovskite solar cell with La‐dopedBaSnO₃andCuSbS₂as the charge transport layers

Shivesh

Alam

Kushwaha³

et al. 2021

Intl J of Energy Research

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A lead-free, completely inorganic, and nontoxic Cs 2 TiBr 6 -based double perovskite solar cell (PSC) was simulated via SCAPS 1-D. La-doped BaSnO 3 (LBSO) was applied as the electron transport layer (ETL) unprecedentedly in the simulation study of PSCs, while CuSbS 2 was utilized as the hole transport layer (HTL). wxAMPS was used to validate the results of SCAPS simulations. Moreover, the first-principle density function theory (DFT) calculations were performed for validating the 1.6 eV bandgap of the Cs 2 TiBr 6 absorber. To enhance the device performance, we analyzed and optimized various parameters of the PSC using SCAPS. The optimum thickness, defect density, and bandgap of the absorber were 1000 nm, 10 13 cm À3 , and 1.4 eV, respectively. Furthermore, the optimum thickness, hole mobility, and electron affinity of the HTL were 400 nm, 10 2 cm 2 V À1 s À1 , and 4.1 eV, respectively. However, the ETL thickness had a negligible effect on the device's efficiency. The optimized values of doping density for the absorber layer, HTL, and ETL were 10 15 , 10 20 , and 10 21 cm À3 , respectively. Herein, the effect of different HTLs was analyzed by matching up the built-in voltage (V bi ) in respect of the open-circuit voltage (V OC ). It was found that the V bi was directly proportional to the V OC , and CuSbS 2 was the champion in terms of efficiency for the PSC. The optimum work function of metal contact and temperature of the PSC were 5.9 eV and 300 K, respectively. After the final optimization, the device achieved an exhilarating PCE of 29.13%. Novelty Statement• LBSO was used as the ETL for the very first time in the simulation study of PSCs, while CuSbS 2 was utilized as the HTL.

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Quantum‐Dots‐In‐Double‐Perovskite for High‐Gain Short‐Wave Infrared Photodetector

Jhang,

Tsai,

Tsai

et al. 2024

Advanced Optical Materials

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Short‐wave infrared (SWIR) photodetectors utilizing quantum dot (QD) material systems, harnessed through the quantum confinement effect to tune the absorption wavelength, offer an attractive avenue for the development of cost‐effective and solution‐processed photodetectors compared to the relatively expensive compound semiconductor photodetectors. However, the pores between the QDs and poor chemical stability after surface modification have impeded the practical application of quantum‐dot‐based photodetectors. In this study, high‐gain SWIR photodetector is demonstrated and achieved by incorporating PbS QD into the Cs2AgBiBr6 halide‐based double perovskite matrix, as confirmed by X‐ray diffraction, transmission electron microscope, and energy dispersive spectrometer. The thin film structure and detailed local structure are revealed by 2D grazing‐incidence wide and small‐angle X‐ray scattering. The resulting PbS@Cs2AgBiBr6‐based SWIR photodetector exhibits remarkable performance with a responsivity and detectivity of 15000 A W−1 and 1.31 × 1012 cm Hz1/2 W−1, respectively. This study offers valuable insights into the design of composite materials for high‐gain SWIR photodetectors.

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Numerical simulation of Cs2AgBiBr6-based perovskite solar cell with ZnO nanorod and P3HT as the charge transport layers

Cited by 75 publications

References 87 publications

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Investigating the theoretical performance ofCs₂TiBr₆‐based perovskite solar cell with La‐dopedBaSnO₃andCuSbS₂as the charge transport layers

Quantum‐Dots‐In‐Double‐Perovskite for High‐Gain Short‐Wave Infrared Photodetector

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Numerical simulation of Cs2AgBiBr6-based perovskite solar cell with ZnO nanorod and P3HT as the charge transport layers

Cited by 75 publications

References 87 publications

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Investigating the theoretical performance ofCs2TiBr6‐based perovskite solar cell with La‐dopedBaSnO3andCuSbS2as the charge transport layers

Quantum‐Dots‐In‐Double‐Perovskite for High‐Gain Short‐Wave Infrared Photodetector

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Product

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About

Investigating the theoretical performance ofCs₂TiBr₆‐based perovskite solar cell with La‐dopedBaSnO₃andCuSbS₂as the charge transport layers