Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

Kuo, Yen−Kuang; Tsai, Min‐Chien; Yen, Shwu-Huey

doi:10.1016/j.optcom.2009.07.036

Cited by 70 publications

(36 citation statements)

References 14 publications

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“…To overcome these problems, various approaches have been proposed to redesign the device structures, such as eliminating the AlGaN EBL [20,21], combining the p-multiple quantum well (MQW) and n-AlGaN EBL [6,22], using lattice-matched InAlN EBL [23], AlGaInN thin barriers [24], staggered InGaN quantum wells [25], InAlN EBL [26] AlGaN/GaN/AlGaN EBL [27], AlGaN/GaN superlattice EBL [28], and adopting an AlGaInN polarization-matched EBL [29]. However, there are some disadvantages of these approaches, such as the degradation of crystalline quality and the reduction in electron confinement.…”

Section: Introductionmentioning

confidence: 99%

Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

Chung

Kim

2014

Superlattices and Microstructures

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Section: Introductionmentioning

confidence: 99%

Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

Chung

Kim

2014

Superlattices and Microstructures

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“…Therefore, the polarization-matched quarternary AlGaInN and InGaN quantum barriers have been suggested to reduce the polarization field in the active region and have been experimentally demonstrated to enhance the light-output power and to reduce the efficiency droop of LEDs [23,24]. It has been also reported that p-AlGaInN and p-AlInN EBL in LED structures can prevent carrier leakage over the EBL [25,26].…”

Section: Introductionmentioning

confidence: 99%

Numerical Study of Enhanced Performance in InGaN Light-Emitting Diodes with Graded-composition AlGaInN Barriers

Kim¹,

Kim²

2013

Journal of the Optical Society of Korea

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In this paper, we report the effect of GaN/graded-composition AlGaInN/GaN quantum barriers in active regions on the electrical and optical properties of GaN-based vertical light emitting diodes (VLEDs). By modifying the aluminum composition profile within the AlGaInN quantum barrier, we have achieved improvements in the output power and the internal quantum efficiency (IQE) as compared to VLEDs using conventional GaN barriers. The forward voltages at 350 mA were calculated to be 3.5 and 4.0 V for VLEDs with GaN/graded-composition AlGaInN/GaN barriers and GaN barriers, respectively. The light-output power and IQE of VLEDs with GaN/graded-composition AlGaInN/GaN barriers were also increased by 4.3% and 9.51%, respectively, as compared to those with GaN barriers.

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“…The inclusion of additional layers with different polarisation constants and doping levels into the structure of the QW will also affect the strength of the total electric field across the QWs in the active region, leading to a further modification to the radiative recombination rates within the LED. It has been suggested that such an effect occurs when an EBL is included within a quantum well stack [13,14]. In this paper we investigate the effect that the inclusion of an EBL in the structure of an LED has on its conduction and valence band profiles and measured the resultant changes in the radiative recombination rate using low temperature PL decay measurements.…”

mentioning

confidence: 99%

Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs

Hammersley

Dawson

Kappers

et al. 2016

Phys. Status Solidi C

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In this paper we investigate the effect of including an electron blocking layer between the quantum well active region and the p‐type layers of a light emitting diode has on the conduction and valence band profile of a light emitting diode. Two light emitting diode structures with nominally identical quantum well active regions one containing an electron blocking layer and one without were grown for the purposes of this investigation. The conduction and valence band profiles for both structures were then calculated using a commercially available Schrödinger‐Poisson calculator, and a modification to the electric field across the QWs observed. The results of these calculations were then compared to photoluminescence and photoluminescence time decay measurements. The modification in electric field across the quantum wells of the structures resulted in slower radiative recombination in the sample containing an electron blocking layers. The sample containing an electron blocking layer was also found to exhibit a lower internal quantum efficiency, which we attribute to the observed slower radiative recombination lifetime making radiative recombination less competitive. (© 2016 The Authors. Phys. Status Solidi C published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

Cited by 70 publications

References 14 publications

Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

Numerical Study of Enhanced Performance in InGaN Light-Emitting Diodes with Graded-composition AlGaInN Barriers

Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs

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