Numerical optimization and performance evaluation of ZnPC:PC70BM based dye-sensitized solar cell

Abstract

The increase in global energy consumption and the related ecological problems have generated a constant demand for alternative energy sources superior to traditional ones. This is why unlimited photon-energy harnessing is important. A notable focus to address this concern is on advancing and producing cost-effective low-loss solar cells. For efficient light energy capture and conversion, we fabricated a ZnPC:PC70BM-based dye-sensitized solar cell (DSSC) and estimated its performance using a solar cell capacitance simulator (SCAPS-1D). We evaluated the output parameters of the ZnPC:PC70BM-based DSSC with different photoactive layer thicknesses, series and shunt resistances, and back-metal work function. Our analyses show that moderate thickness, minimum series resistance, high shunt resistance, and high metal-work function are favorable for better device performance due to low recombination losses, electrical losses, and better transport of charge carriers. In addition, in-depth research for clarifying the impact of factors, such as thickness variation, defect density, and doping density of charge transport layers, has been conducted. The best efficiency value found was 10.30% after tweaking the parameters. It also provides a realistic strategy for efficiently utilizing DSSC cells by altering features that are highly dependent on DSSC performance and output.

Performance analysis of p-MoTe2/n-MoSe2 -based bifacial solar cells with p+-N:Cu2O as BSF layer by SCAPS-1D

“…The consequences of an increase in volume defects of the MoSe 2 window layer within the limit of 10 11 to 10 17 cm −3 have been discussed with the help of figure 6(b). It is observed in figure 6(b) that J sc , V oc, and FF are almost constant up to a certain defect density of 10 14 cm −3 , after that all the parameters are drastically dropped as a result, the efficiency is considerably decreased from 27.6 to 15.9%, which is originated from the Shockley-Read-Hall (SRH) recombination due to traps inside the MoSe 2 window layer [35].…”

“…These parasitic losses can be able to impact on J-V behavior of solar cells. The origin of series resistance, Rs, is electrical resistance related to the bulk resistance of the semiconductors (ETL, BSF, and absorber layer), the contact between metal and semiconductor and the resistance of the metal [35,40]. Rs has little impact on V oc but mainly affects FF and PCE due to decreasing the V mp as well.…”

“…Rs has little impact on V oc but mainly affects FF and PCE due to decreasing the V mp as well. The effect of series resistance on solar cells can be expressed by [35]:…”

“…Only enough high shunt resistance can prevent such type of losses. The effect of shunt resistor on solar cell expressed as [35]:…”

Correlation between defect properties and the performance of eco-friendly CsSnI3-based perovskite solar cells

“…Finding the optimal ETL thickness to achieve the highest PCE is crucial. Excessive thickness can hinder light absorption by the absorber layer, reducing photogenerated carriers [37]. In this context, an ETL thickness of 130 nm demonstrates superior performance.…”