2024
DOI: 10.1002/nano.202400020
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Numerical simulation of a highly efficient perovskite solar cell based on FeSi2 photoactive layer

George G. Njema,
Joshua K. Kibet,
Nicholas Rono
et al.

Abstract: The primary aim of this work is to investigate the use iron di‐silicide (FeSi2) as a photoactive layer in order to achieve superior performance in the solar cell architecture—ITO/TiO2/FeSi2/CuSCN/Ni. The optimum thickness of the absorber layer was found to be 1000 nm, which gave optimal properties of the proposed cell—a short‐circuit current density (Jsc) of 51.41 mAm−2, an open‐circuit voltage (Voc) of 0.93 V, a fill factor (FF) of 77.99%, and power conversion efficiency (PCE) of 37.17%. The introduction of a… Show more

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Cited by 1 publication
(4 citation statements)
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“…In this model cell structure, both shunt resistance (Rsh) and series resistance (Rs) significantly influence the device's operational performance [31]. Rs impedes current flow through the cell resulting from resistance encountered as current traverses different layers and interfaces within the device.…”
Section: Impact Of Shunt Resistancesmentioning
confidence: 99%
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“…In this model cell structure, both shunt resistance (Rsh) and series resistance (Rs) significantly influence the device's operational performance [31]. Rs impedes current flow through the cell resulting from resistance encountered as current traverses different layers and interfaces within the device.…”
Section: Impact Of Shunt Resistancesmentioning
confidence: 99%
“…A band alignment diagram illustrates the bulk band structures of the materials and their alignment after contact, indicating the type of alignment [94]. For instance, in a Type I alignment, the conduction band (CB) minimum of one material aligns with or is lower than the valence band (VB) maximum of the other material, thus facilitating efficient electron flow from higher to lower energy levels [15,31]. Basically, the band offset can be either cliff-like (where absorber CB is above the one of either ETL or HTL) or spike-like (where the absorber CB is lower than that of the ETL or HTL) conformation, however in this device none was exhibited [16,95].…”
Section: The Band Diagrammentioning
confidence: 99%
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