Numerical modeling of intra-band tunneling for heterojunction solar cells in scaps

Verschraegen, Johan; Burgelman, Marc

doi:10.1016/j.tsf.2006.12.049

Cited by 203 publications

(95 citation statements)

References 7 publications

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“…The substrate temperature is kept at 110°C, the CIS solar cell with a CuI buffer layer exhibits an open circuit voltage around 380 mV. It is known that n-CuInS 2 /p-CuI heterojunction may reduce the influence of spikes at the interface [15]. We suspect that this is the main reason for the increase of open circuit voltage for CuInS 2 solar cell with a CuI buffer layer.…”

Section: Optical Characteristicsmentioning

confidence: 94%

Microstructure and optical properties of sprayed γ-CuI thin films for CuInS2 solar cells

Yan

Zhou

et al. 2011

Rare Metals

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γ-CuI thin films were prepared by a spraying method using acetonitrile as a solvent, CuI and iodine as reagents. The influences of substrate temperature on the structure, topography, and optical properties of CuI films were investigated. Scanning electron microscope (SEM) photos revealed that the shape and grain size of CuI grains were related to substrate temperature. X-ray diffraction results showed that substrate temperature affected the crystalline quality of CuI films. When the substrate temperature was 110°C, CuI thin films showed γ-phase zinkblende structure with (111) preferred orientation. The dimension of the globular CuI crystallite was approximately 35 nm, the energy band gap was 2.97 eV, the maximum transmittance was 87.3% in the part of the visible region, and the open circuit voltage was close to 380 mV. This opened a route for a cadmium-free buffer layer for CuInS 2 solar cells.

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Section: Optical Characteristicsmentioning

confidence: 94%

Microstructure and optical properties of sprayed γ-CuI thin films for CuInS2 solar cells

Yan

Zhou

et al. 2011

Rare Metals

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“…SCAP calculates solutions of Poison's equation for electrostatic potential ψ and the continuity equations for electrons and holes at steady state with boundary conditions [20,21] and in the frequency domain [22,23].…”

Section: Basic Equationsmentioning

confidence: 99%

Boosting the Performance of Solar Cells with Intermediate Band Absorbers—The Case of ZnTe:O

Skhouni¹,

Manouni²,

Bayad³

et al. 2017

JEPE

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This work reports on modeling IB (intermediate band) solar cells based on ZnTe:O semiconductor and determination of their photovoltaic parameters using SCAPS (solar cell capacitance simulator) software. A comparative study between photovoltaic performance of ZnTe and ZnTe:O based solar cells has been carried out. It has been found that the energy conversion efficiency η, short-circuit current density J sc , EQE (external quantum efficiency) and FF (fill factor) increased with increasing oxygen doping concentration N t up to the shallow acceptor density N A and decreased when N t was higher than N A . The open circuit-voltage V oc remained constant for N t lower than the acceptor doping concentration N A and decreased for N t higher than N A . The increase of η, J sc and FF is due to the fact that IB is fully empted, so sub-bandgap photons can be absorbed by hole photoemission process from the VB (valence band) to the IB. The decrease of η, J sc , EQE and FF is attributed to overcompensation for the base doping N A making electron photoemission process from IB to the CB (conduction band) maximized. This indicates that there is a competition between oxygen doping and intrinsic acceptor defects. The optimal concentrations of oxygen and shallow acceptor carriers were found to be N t ≈ 10 15 cm -3 and N A ≈ 10 14 cm -3 . The corresponding photovoltaic parameters were η = 41.5%, J sc = 31.2 mA/cm 2 , V oc = 1.80 V and FF = 75.1%. Finally, the EQE spectra showed a blue shift of absorption edge indicating that the absorption process is extended to the sub-bandgap photons through IB.

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“…Recombination in the interface states is described by an extension of the SRH formalism allowing the exchange of electrons between the interface state and the two adjacent conduction bands and of holes between the state and the two adjacent valence bands [22,23,26]. The current transport mechanism of our model can be explained in general terms by considering the effect of light on the band diagram [27]. The total deep states density in doped layers has been chosen higher than in the intrinsic one [28].…”

Section: Numerical Simulationsmentioning

confidence: 99%

A study on the effects of amphoteric defect concentration on the characteristics parameters of In x Ga1−x N thin-film solar cells

2016

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Group III nitride semiconductors can partly cover the solar spectrum from ultraviolet to infrared spectra due to their ability to vary their band gap. These semiconductors have a substantial potential to develop ultrahigh efficiency solar cells. However, defects have a profound effect on their power conversion efficiency. Since defects lead to dramatic changes in electronic and optoelectronic properties, controlling process to get acceptable defects density in solar cells is a noteworthy parameter in technological and device applications. This paper indicates a numerical simulation study to optimize the p-i-n InGaN homojunction solar cells by investigation of defect density in the whole cell structure. In this study, we assumed that the p-region and n-region thicknesses are 100 and 150 nm, respectively, and the optimized value of cell thickness is 1.3 lm. Similarly, we chose amphoteric defect density from 10 15 to 10 19 cm -3 , and then the effects of defects density on characteristic parameters of cell have been studied. Based on our results, when the amphoteric defect concentration is below the 10 15 cm -3 , constant value for FF values in all layers was obtained. Therefore, cell efficiency remains the same in lower amphoteric defect density where all FF, V OC and J SC are constant. By increasing the amphoteric defect density from 10 15 cm -3 , the cell efficiency falls down dramatically from 20 to about 1 % at 10 19 cm -3 . In our simulated structure, the cell efficiency parameter decreases with increasing the defects density until it reaches the 10 15 cm -3 . Above this value, no change in the parameters was observed. Our results revealed that the high defect density range 10 15 -10 19 cm -3 may be an equally significant cause of performance loss.

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Numerical modeling of intra-band tunneling for heterojunction solar cells in scaps

Cited by 203 publications

References 7 publications

Microstructure and optical properties of sprayed γ-CuI thin films for CuInS2 solar cells

Microstructure and optical properties of sprayed γ-CuI thin films for CuInS2 solar cells

Boosting the Performance of Solar Cells with Intermediate Band Absorbers—The Case of ZnTe:O

A study on the effects of amphoteric defect concentration on the characteristics parameters of In x Ga1−x N thin-film solar cells

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