Numerical modeling of energy balance equations in quantum well Al/sub x/Ga/sub 1-x/As/GaAs p-i-n photodiodes

Fardi, Hamid; Winston, D.W.; Hayes, R.E.; Hanna, Melvin W.

doi:10.1109/16.841221

Cited by 16 publications

(6 citation statements)

References 22 publications

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“…70 Unlike low energy electrons, hot carriers that would have sufficient energy to avoid being trapped by the mid gap states created by these defects. Fardi et al 71 saw evidence for this in AlGaAs/GaAs p-i-n photodiodes. They found that hot carriers were much more likely to avoid SRH recombination, allowing them to escape quantum well layers and be injected into adjacent layers.…”

Section: Mechanisms For Photo-assisted Etchingmentioning

confidence: 94%

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

Zhu

Sridhar

Liu

et al. 2014

Journal of Applied Physics

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feed gases diluted in Ar (50%-50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br 2 /Ar and HBr/Cl 2 /Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Etching rates measured under MgF 2 , quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl 2 /Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45 with respect to h110i cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation. V

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Section: Mechanisms For Photo-assisted Etchingmentioning

confidence: 94%

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

Zhu

Sridhar

Liu

et al. 2014

Journal of Applied Physics

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“…The expression for the direct kinetic energy exchange among the electron and hole carriers is based on the effective mass approximation due to optical generation for electron and holes in the bulk described in detail in articles [14,15]. The details of the device modeling and the formulations are also discussed in our previous work published in [16,17]. order to reflect unabsorbed photons from the GaAs/AlGaAs QW junction.…”

Section: Device Modelingmentioning

confidence: 99%

Design and Simulation of Multiquantum-Well AlGaAs/GaAs Single Junction Solar Cell with Back Surface Reflector

Fardi

2012

ISRN Renewable Energy

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This paper reports on the design and simulation of a multiquantum Well (MQW) AlGaAs/GaAs single p-i-n junction cell with a Distributed Bragg Reflector (DBR) placed at back surface. The DBR structure reflects the part of the spectrum that benefits from absorption in the AlGaAs MQW structure, while being transparent to the IR spectrum. The addition of a DBR allows for a possible second bottom cell junction to be placed beneath the DBR in series with the MQW single cell for an additional efficiency enhancement. The efficiencies and short-circuit currents for the AlGaAs MQW cell with and without DBR are simulated. An energy balance equations model coupled with drift-diffusion equations is solved in heterojunction p-i-n with embedded quantum wells to model hot electron effects. The current-voltage characteristics of an MQW single junction AlGaAs/GaAs p-i-n solar cell structure were compared with measured data. The efficiencies and short-circuit currents of an optimized cell with and without DBR are simulated. Results obtained show improvement in short circuit current and efficiency when both MQW and DBR were used. Simulation results predict an efficiency of about 28.4% for the MQW AlGaAs-DBR single p-i-n junction photovoltaic cell under the presence of both radiative and nonradiative recombination mechanisms.

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“…We will assume fast thermalization of the charge carriers with the lattice, neglecting hot electron effects, considered in Refs. [15,16].…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric field effects in low-dimensional structure solar cells

Kettemann¹,

Guillemoles

2002

Physica E: Low-dimensional Systems and Nanostructures

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Taking into account the temperature gradients in solar cells, it is shown that their efficiency can be increased beyond the Shockley-Queisser-limit [1]. The driving force for this gain is the temperature gradient between this region and its surroundings. A quantitative theory is given. Though the effect is found to be weak in conventional solar cells, it is argued that it can be substantially increased by proper choice of materials and design of the device. In particular, it is shown that the insertion of a quantum well can enhance the efficiency beyond the one of a single gap cell, due to the presence of temperature jumps at the heterojunctions.

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Numerical modeling of energy balance equations in quantum well Al/sub x/Ga/sub 1-x/As/GaAs p-i-n photodiodes

Cited by 16 publications

References 22 publications

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

Design and Simulation of Multiquantum-Well AlGaAs/GaAs Single Junction Solar Cell with Back Surface Reflector

Thermoelectric field effects in low-dimensional structure solar cells

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