Numerical Investigation of Optical and Photoelectric Properties for 850 nm VCSELs with Arbitrary Crystal Orientation

Abstract

High-speed VCSELs are widely used for high-capacity, short-range data communication links. Here, we numerically investigate the optical and electronic properties of a crystal orientation-dependent 1.06% compression InGaAs-AlGaAs laser emitting around 850 nm. The reduction of the density of states is observed in the largest energy range for the quantum well in the (110) orientation compared with the conventional (001) orientation. The calculated transparency carrier density decreases from 2.74 × 1018 cm−3 to 1.88 × 1018 cm−3 with the gain coefficient rising from 4969.4 cm−1 to 5427.2 cm−1 in (110) orientation. The 3 dB bandwidth of 31.25 GHz is realized in the (110) orientation, which can support 60 Gbps (NRZ) applications.

Active Region Design With Different Crystal Orientations for High-Speed DFB Laser

“…In this research, we employ linear interpolation to derive the relevant parameter for Al y Ga x In 1-x-y As material systems based on the parameters of the related binary semiconductors, The interpolation formulae are as follows: (16) the material parameters used in the modeling are sourced from [34], and the temperature-dependent bandgap energy is calculated using the following expression [35]:…”

“…Therefore, the growing crystal orientations of the quantum well are considered to improve the quantum well differential gain and reduce the LEF. Till now, the optical properties of various crystal orientations have been investigated in different applications [14], [15], [16]. The effect of biaxial tensile strain on photoluminescence and carrier distribution with differently oriented germanium (Ge) has been studied in previous research [17].…”