“…While much work has gone into calculating bulk impact ionization rates using this method [9][10][11][12][13] we are unaware of any serious attempt to use it for actual ensemble calculations of impact ionization in real III-V device structures. Indeed, authors tend to fall back on drift diffusion models, numerical models [14,15] or, if Monte Carlo models are used, then a Keldysh-type approximation [16] to the impact ionization process is usually employed or tabulated values of ionization rates as a function of energy, calculated using the sophisticated models, are utilized [17].…”