Numerical evaluation on surface temperature uniformity of multi-zone and single-zone ceramic heaters with the electrostatic chuck

Lee, Hyung Ju; Lee, Seong Hyuk

doi:10.1007/s12206-021-0745-3

Cited by 7 publications

(3 citation statements)

References 19 publications

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“…187) The uniformity of the substrate temperature was controlled using a multizone heating system. [188][189][190][191] The temperature of the electrostatic chuck, used as a wafer susceptor, was monitored using a wireless-type on-wafer temperature monitoring system. 189) To understand the temperature results, the heat transfer characteristics of the ceramic puck for the electrostatic chuck, and the effects of different types of heating zones, such as multi-zone/singlezone heaters, 190) and the temperature uniformity of the ceramic puck 191,192) were investigated.…”

Section: Sa0803-11mentioning

confidence: 99%

Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies

Kambara

Kawaguchi

Lee

et al. 2022

Jpn. J. Appl. Phys.

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Low-temperature plasma processing technologies is essential for material synthesis, device fabrication, and surface treatment. The development of plasma-related products and services requires an understanding of the multiscale complex behaviors of plasma and the hierarchical integration of plasma generation, energy and mass transports through sheath region, surface reactions, and other processes. The importance of science-based and data-driven approaches to controlling systems is argued. The state-of-the-art of deep learning, machine learning, and artificial intelligence in low-temperature plasma science and technology is reviewed. In this review, the requirements and challenges for plasma parameter prediction and processing recipe discovery are asserted by researchers in the fields of material science and plasma processing. It also outlined a science-based, data-driven approach for development of virtual metrology in plasma processes.

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Section: Sa0803-11mentioning

confidence: 99%

Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies

Kambara

Kawaguchi

Lee

et al. 2022

Jpn. J. Appl. Phys.

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“…[1][2][3] A small variation in a local temperature on the wafer-in-process causes a large deviation in the deposition and etching processes. [4][5][6][7] Thermal energy generated by atomic collision during the process was regarded the most suspicious reason, and it has been reduced by controlling temperature through an electrostatic chuck (ESC).…”

Section: Introductionmentioning

confidence: 99%

Enhanced temperature uniformity of electrostatic chuck: ceramic surface contact ratio and backside gas pressure

Youn,

Hong

2024

Jpn. J. Appl. Phys.

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In semiconductor processes, precise control of the wafer-in-process is a key parameter closely related to production yield, and the development of electrostatic chuck (ESC) continues towards higher chucking voltage with higher backside cooling gas. This study aims to determine the target temperature and uniformity of the wafer surface by varying the contact ratio of the ceramic-embossing facing the wafer-in-process. A computational fluid dynamics (CFD) model with a thin wall boundary condition is considered to interpret the flow of the rarefied gas between the wafer and ceramic surface of the ESC. Through 3D simulations conducted with ANSYS Fluent, we observed temperature changes as the backside gas pressure varied from 1 to 9 Torr. The ESC with the highest contact ratio performed exceptionally well with an average temperature of 295 K and a coefficient of variation of 0.04 %.

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“…Even small parts can cause etching characteristic problems in advanced plasma etching processes. For this reason, it is important to study electrostatic chucks (ESC) since they are closely related to the process result [8,9].…”

Section: Introductionmentioning

confidence: 99%

On-Wafer Temperature Monitoring Sensor for Condition Monitoring of Repaired Electrostatic Chuck

et al. 2022

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The temperature of electrostatic chuck (ESC), a wafer susceptor used in semiconductor etch equipment, must accurately control the temperature of wafers during the etching process to obtain uniform and consistent process results. Failure to control the precise temperature can lead to rejection from the high-volume semiconductor manufacturing site (one of the most high-cost equipment components which can be repaired for its extended use). In this research, we propose a wireless-type on-wafer temperature monitoring system (OTMS) for easier and faster temperature monitoring to help temperature measurements of the repaired ESC in atmospheric and vacuum conditions. The proposed method, which can effectively measure the temperature distribution of the ESC, should manage the operational condition of ESC. A successful demonstration of the 300 mm size OTMS for the repaired parts enhanced the quality assurance with a temperature deviation of ±3.83 °C over 65 points of measurement.

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Numerical evaluation on surface temperature uniformity of multi-zone and single-zone ceramic heaters with the electrostatic chuck

Cited by 7 publications

References 19 publications

Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies

Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies

Enhanced temperature uniformity of electrostatic chuck: ceramic surface contact ratio and backside gas pressure

On-Wafer Temperature Monitoring Sensor for Condition Monitoring of Repaired Electrostatic Chuck

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