Numerical design of induction heating in the PVT growth of SiC crystal

Su, Juan; Chen, Xuejiang; Li, Yuan

doi:10.1016/j.jcrysgro.2014.02.030

Cited by 14 publications

(16 citation statements)

References 9 publications

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“…As seen from Figure 10d, the T_R is non-axisymmetric for the spiral coil, and the worse T_R are presented in the region far from the center of crystal which may generate more defects. Defects in SiC crystal-such as dislocation, microtubules, etc.-are generated mainly by non-uniform temperature gradient [2,13,19]. Figure 10 presents fields of temperature and temperature gradient (T_R, K/m) in r-direction on rθ cross section in the crystal.…”

Section: Resultsmentioning

confidence: 99%

“…The weaker convection heat transfer is always ignored. For radiation heat transfer, species in the growth chamber are not participated in radiation process, so the surface to surface (S2S) radiation model is used to calculate radiation heat flux [2,[14][15][16]. The axisymmetric assumption is adopted in the majority of numerical simulation research, so the model is two-dimensional, the effect of non-axisymmetric coils on electromagnetic field and temperature field are always missed artificially.…”

Section: With the Development Of Computer Technology Numerical Simulmentioning

confidence: 99%

“…where Q eddy is induction heating source term in the graphite crucible; Q IF is heating source term acting on cell interfaces, such as radiation and convection heat exchange (Q insu ) on felt walls, radiation heat exchange (Q rad ) on growth chamber walls. Equations (1) and (2) are discretized by the finite volume method, and solved by the SIMPLE algorithm.…”

Section: Modeling Of Induction Heating and Heat Transfermentioning

confidence: 99%

“…Silicon carbide crystal (SiC) crystals are used to product semiconductor devices under higher-temperature, higher-frequency, and higher-power conditions [1]. Compared with silicon, silicon carbide crystal has better performance on chemical and thermal properties, such as higher thermal conductivity, chemical stability, radiation stability, and mechanical stability [2]. The physical vapor transport (PVT) method is the most successful and common method to grow SiC crystals at pressure ≤ 50 mbar, increasing crystal growth rate [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

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Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

et al. 2018

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Three-dimensional numerical simulation platform for silicon carbide crystal growth furnace was established using C programing language, where a physical model of the furnace was built based on cylindrical coordinates; governing equations for electromagnetic and temperature fields were discretized by finite volume method; radiation characteristics were studied with the help of S2S model (surface to surface radiation model); and the least distance method was proposed to check radiation faces visibility efficiently. LU decomposition algorithm based on graphic processing unit (GPU) technology was developed to accelerate the solving process of surface to surface radiation. Then the radiation heat transfer in silicon carbide crystal (SiC) growth chamber and temperature field of silicon carbide growth furnace were studied quantificationally at I = 1250 A and F = 16 kHz. The effects of coil structures (axisymmetric and spiral) on temperature field and its gradient distributions were investigated by standard deviation method. The simulation results demonstrate that spiral electromagnetic coil generates non-axisymmetric temperature field easily; the radiation heat flux is 10 2~1 0 3 times more than conduction heat flux, radiation heat transfer is helpful to increase temperature evenness; the spiral temperature field on the SiC crystal cross-section reduces the poor homogeneity of temperature gradient, which will cause crystal to generate large defects.

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Section: Resultsmentioning

confidence: 99%

Section: With the Development Of Computer Technology Numerical Simulmentioning

confidence: 99%

Section: Modeling Of Induction Heating and Heat Transfermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

et al. 2018

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“…16,17,22 The electromagnetic field and induction heat generation were calculated using the Maxwell equations, and transient temperature distribution was simulated considering conduction and radiation between various components. [17][18][19][20][21] In Ref. 22, governing equations for electromagnetic and temperature fields were discretized by the finite volume method.…”

Section: Introductionmentioning

confidence: 99%

Thermal and electrical performance analysis of induction heating based‐thermochemical reactor for heat storage integration into power systems

Gassi

Lougou

Baysal

et al. 2021

Intl J of Energy Research

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In this study, the thermal and electrical performance analysis of an induction heating based-thermochemical reactor is investigated for high-temperature heat storage. The induction-heating model is built with Maxwell equations, and the surface-to-surface (S2S) radiation model is used for the induced and diffused thermal energy flow transport in the fluid phase within the reactor inner cavity. The effects of operating and structural parameters in terms of the coil turn number, coil current intensity and frequency, the conductive plate, and the coil's relative permeability, electrical conductivity, and emissivity could affect the heat generation, input power demand, and energy consumption of the proposed reactor performance are sufficiently investigated. It is found that the reactor temperature distribution resulted from the homogenized multi-turn coil magnetomotive force and frequency with the current intensity 48% more effective in reaching the desired temperature at the heat storage medium. However, the conductive plate relative permeability, electrical conductivity, and surface emissivity significantly affect the induction heating system's thermal power, with the relative permeability having the highest impact of 13% in the storage medium's temperature increasing at low current intensity. Moreover, the surface emissivity shows remarkable effects when the inducting heating operates at a high current. Significant energy consumption, more than 159%, is observed when the induction heating generator operates at steady-state mode. The reactor heating region temperature increases when the reactor operating current and frequency get high. It is observed that the more the induced heat was applied to the reactor, the more the reactor is heating up to a steady-state. The instantaneous temperature distribution inside the reactor depicted the rise in the temperature is caused by convection and radiation heat transfer. Higher and more uniform temperature distribution inside the reactor is obtained by optimizing the reactor operating and structural parameters.

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Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Xu,

Han,

et al. 2024

Cryst. Res. Technol.

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Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

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Numerical design of induction heating in the PVT growth of SiC crystal

Cited by 14 publications

References 9 publications

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

Thermal and electrical performance analysis of induction heating based‐thermochemical reactor for heat storage integration into power systems

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

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