2009
DOI: 10.1007/s11082-010-9381-3
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Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector

Abstract: We report on 2D numerical simulations of spectral photoresponse characteristic for two-color HgCdTe infrared photovoltaic detector. Effects of thickness of absorption layer and doping profiles on the photoresponse, quantum efficiency and crosstalk have been investigated. Optimal thickness of absorption layers and doping profiles are numerically calculated.

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Cited by 9 publications
(2 citation statements)
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“…Additionally, the tunneling effect, such as indicated in the band-to-band model, is implemented in the continuity equations as additional generation-recombination processes. [6][7][8] These models are used to describe the motion of carriers. In the simulation, the only change effected is the geometric parameters of the device.…”
Section: Methodsmentioning
confidence: 99%
“…Additionally, the tunneling effect, such as indicated in the band-to-band model, is implemented in the continuity equations as additional generation-recombination processes. [6][7][8] These models are used to describe the motion of carriers. In the simulation, the only change effected is the geometric parameters of the device.…”
Section: Methodsmentioning
confidence: 99%
“…Spectral crosstalk existing between two bands can influence the function of discrimination. It will be effectively suppressed by incorporating a compositional barrier between two absorption layers [6]. In this paper, the barrier composition and thickness is optimized according to practical technical parameters.…”
Section: Introductionmentioning
confidence: 99%