Numerical analysis of solid–liquid interface shape during large-size single crystalline silicon with Czochralski method

Teng, Ran; Chang, Qing; Li, Yang; Cui, Bin; Xiao, Qingnong; Zhang, Guohu

doi:10.1007/s12598-017-0888-7

Cited by 7 publications

(3 citation statements)

References 27 publications

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“…The use of a Ge single crystal, 13 a gadolinium orthosilicate (GSO) crystal, 14 a Nd: YAG crystal 15 and other studies have been reported about the effect of the exposed crucible wall, and the large size silicon crystal has been studied well. 16,17 There were some related simulations of an LN single crystal that have been studied. [18][19][20] However, the effect of the exposed crucible wall on crystal growth was different for different crystals and growth conditions, and these cannot be used as a reference.…”

Section: Introductionmentioning

confidence: 99%

Effect of exposed crucible wall on the Czochralski growth of an LN crystal

et al. 2023

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Section: Introductionmentioning

confidence: 99%

Effect of exposed crucible wall on the Czochralski growth of an LN crystal

et al. 2023

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“…coupling calculations [23] for the heat transfer, melt convection, and argon flow in the single crystal silicon growth furnace [11,24]. reducing the crystallization rate leads to a flattening of the S-L interface [30]. Lijun Liu et al…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Influence of Solid–Liquid Interface Shape Based on the Jordan Model on Cz-Silicon Dislocation Defects

Li,

Zhao,

Huang

et al. 2023

Silicon

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During the growth of Czochralski single crystal silicon, the change of solid-liquid interface shape leads to uneven distribution of thermal stress, and the concentration of thermal stress leads to crystal defects in the process of single crystal formation, which reduces the efficiency of solar cells. In order to avoid a large number of crystal defects caused by the concentration of thermal stress near the solid-liquid interface, the effect of the solid-liquid interface shape on thermal stresses is investigated in this study using numerical calculations to determine the most favourable solid-liquid interface shape for single crystal silicon growth.The results show that the von Mises stress on the m-shaped solid-liquid interface is smaller ; von Mises stress distribution on the solid-liquid interface of a shape is more uniform ; the von Mises stress on the solid-liquid interface of the n-shaped solid-liquid interface is large, and the von Mises stress can be released by controlling the solid-liquid flipping through a small range of pulling speed fluctuations, thereby reducing defects in single-crystal silicon.

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“…The application of MF generates Lorentz forces that effectively suppress the flow, thereby improving the distribution of impurities such as oxygen and carbon in the crystal. Additionally, the shape of the solid-liquid interface, which influences factors such as crystallization rate, inherent stress in the crystal, and even point defect behavior, needs to be precisely controlled using MF [5]. Therefore, in order to optimize the MCZ control process it is essential to gain a thorough understanding of the heat and mass transfer mechanisms in the melt [6].…”

Section: Introductionmentioning

confidence: 99%

Three-Dimensional Simulation of Melt Convection and Oxygen Transport in CZ-Si Crystal Growth with Cusp Magnetic Fields

Cen,

Guo

2023

Crystals

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The application of magnetic fields has become a standard control technique in the CZ-Si growth industry. To investigate the impact of cusp-shaped magnetic fields (CMF) on heat and mass transfer in the melt, a series of transient three-dimensional simulations were conducted for the growth of a 100 mm CZ-Si crystal with a cylindrical crucible. The turbulent melt motion was modeled using the large eddy simulation (LES) method. Six configurations of CMF with various zero-Gaussian plane (ZGP) positions were examined and numerically compared. The computed results showed that different ZGP positions resulted in distinct types of melt convection, buoyant plumes, and thermal waves. Additionally, it was observed that the studied CMF configurations effectively reduced oxygen dissolution from the crucible wall along with oxygen impurity incorporation into the crystal. These findings demonstrate the potential for precise control of the heat and mass transfer process in CZ-Si growth through the application of suitable CMF.

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Numerical analysis of solid–liquid interface shape during large-size single crystalline silicon with Czochralski method

Cited by 7 publications

References 27 publications

Effect of exposed crucible wall on the Czochralski growth of an LN crystal

Effect of exposed crucible wall on the Czochralski growth of an LN crystal

Investigation of the Influence of Solid–Liquid Interface Shape Based on the Jordan Model on Cz-Silicon Dislocation Defects

Three-Dimensional Simulation of Melt Convection and Oxygen Transport in CZ-Si Crystal Growth with Cusp Magnetic Fields

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