Numerical analysis of constitutional supercooling in heavily doped silicon crystals grown using the Czochralski method

Mukaiyama, Yuji; Artemyev, Vladimir; Sueoka, Koji

doi:10.1016/j.jcrysgro.2022.126844

Cited by 4 publications

(3 citation statements)

References 28 publications

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“…This instability is explained in constitutional supercooling . Consequently, the interface sometimes becomes a cellular structure rather than planar growth . Therefore, the stability of the steps is considered the key factor of the cellular structure formation in SiC solution growth …”

Section: Introductionmentioning

confidence: 99%

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Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions

Zhou

Miura

Dang

et al. 2023

Crystal Growth & Design

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For the solution growth of silicon carbide, solvent inclusions are significant technological issues, and methods to suppress the formation of solvent inclusions are investigated in this study. Experimental observations show that solvent inclusions are formed behind the cellular structures. A phase field model is used to reproduce the formation process of cellular structures and solvent inclusions. Simulation results indicate that slight perturbations of the step front can convert into cellular structures in the case of insufficient supply of carbon, and the overdeveloped cellular structures consequently result in solvent inclusions. Accordingly, several schemes can be suggested by the simulation model to suppress the formation of cellular structures by enhancing the carbon supply. By increasing the carbon diffusion coefficient, cellular structures can be suppressed. Moreover, the step height and the solution flow direction also play an important role in suppressing the cellular structures. This study provides a comprehensive understanding of the formation process of cellular structures and solvent inclusions. A growth process with a high diffusion coefficient and opposite solution flow to the step flow direction was proposed to suppress the formation of cellular structures. The proposed numerical model could be applied in other solution crystal growth methods.

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Section: Introductionmentioning

confidence: 99%

“…14 Consequently, the interface sometimes becomes a cellular structure rather than planar growth. 15 Therefore, the stability of the steps is considered the key factor of the cellular structure formation in SiC solution growth. 16 To suppress the formation of inclusions, the influencing factors of step stability should be investigated.…”

Section: Introductionmentioning

confidence: 99%

Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions

Zhou

Miura

Dang

et al. 2023

Crystal Growth & Design

View full text Add to dashboard Cite

show abstract

“…In recent years, Mukaiyama et al investigated the influence of process parameters of constitutional supercooling in heavily doped Cz silicon crystal growth using CGSim. 8 The effects of thermal stress and heavy doping in intrinsic point defects were simulated also by using CGSim. 9 Popescu et al studied the effects of crucible rotation on temperature and oxygen distribution using STHAMAS 3D.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

et al. 2023

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Evaluation of numerical simulation of constitutional supercooling during heavily Boron-Doped silicon crystal growth using Cz method

Mukaiyama

Fukui

Taishi

et al. 2023

Journal of Crystal Growth

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Numerical analysis of constitutional supercooling in heavily doped silicon crystals grown using the Czochralski method

Cited by 4 publications

References 28 publications

Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions

Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions

Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

Evaluation of numerical simulation of constitutional supercooling during heavily Boron-Doped silicon crystal growth using Cz method

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